Modulated beam epitaxial growth of high quality GaAs single quantum wells at low temperature

1991 ◽  
Vol 59 (7) ◽  
pp. 820-822 ◽  
Author(s):  
K. F. Longenbach ◽  
S. Xin ◽  
C. Schwartz ◽  
Y. Jiang ◽  
W. I. Wang
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Single Quantum ◽  
High Quality

Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells

1984 ◽  
Vol 68 (1) ◽  
pp. 398-405 ◽  
Author(s):  
R.D. Dupuis ◽  
R.C. Miller ◽  
P.M. Petroff
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality

Optical investigations and exciton localization in high quality Zn1−xMgxO–ZnO single quantum wells

2007 ◽  
Vol 91 (8) ◽  
pp. 081911 ◽  
Author(s):  
M. Al-Suleiman ◽  
A. El-Shaer ◽  
A. Bakin ◽  
H.-H. Wehmann ◽  
A. Waag
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality ◽  
Exciton Localization

Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells

1989 ◽  
Vol 55 (25) ◽  
pp. 2611-2613 ◽  
Author(s):  
D. J. Arent ◽  
S. Nilsson ◽  
Y. D. Galeuchet ◽  
H. P. Meier ◽  
W. Walter
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Quantum ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting

Nano Energy ◽  
2019 ◽  
Vol 66 ◽  
pp. 104089 ◽  
Author(s):  
Hong-Ping Ma ◽  
Jia-He Yang ◽  
Jia-Jia Tao ◽  
Kai-Ping Yuan ◽  
Pei-Hong Cheng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Water Splitting ◽  
Zno Nanowires ◽  
Photoelectrochemical Water Splitting ◽  
High Quality

Epitaxial growth of low temperature GaN using metal migration enhanced epitaxy for high-quality InGaN/GaN heterojunctions

2018 ◽  
Vol 120 ◽  
pp. 781-787 ◽  
Author(s):  
Hyeonseok Woo ◽  
Jongmin Kim ◽  
Sangeun Cho ◽  
Yongcheol Jo ◽  
Cheong Hyun Roh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
High Quality ◽  
Migration Enhanced Epitaxy ◽  
Metal Migration

On the preparation and characterization of high‐quality GaAs single quantum wells

1992 ◽  
Vol 71 (10) ◽  
pp. 5263-5265 ◽  
Author(s):  
R. Hey ◽  
M. Höricke ◽  
A. Frey ◽  
V. Egorov ◽  
P. Krispin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality

Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy

1991 ◽  
Vol 228 ◽  
Author(s):  
S. Xin ◽  
K. F. Longenbach ◽  
C. Schwartz ◽  
Y. Jiang ◽  
W. I. Wang
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
High Growth ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Temperature Growth ◽  
Low Temperature Growth

ABSTRACTGaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produce a metal-rich surface. Devices grown at a substrate temperature of 500 °C exhibit threshold current densities below 1 kA/cm2. This value is lower than normally grown low temperature lasers and is the lowest achieved by any low substrate temperature growth technique. In addition, low temperature (10 K) photoluminescence of single quantum wells grown with this technique exhibit full-width half maximum values, comparable to that attainable by higher temperature growth techniques. The improved quality of these low temperature grown quantum structures is attributed to both a smoothing of the growth front and a reduction of excess As during the modulated beam epitaxy process. The high growth rates and less frequent shutter operation of this technique make it a more practical than migration enhanced epitaxy or atomic layer epitaxy for low temperature growth.

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