Transport properties of closely separated two‐dimensional electron gases in a channel‐doped back gated high electron mobility transistor
2008 ◽
Vol 40
(5)
◽
pp. 1380-1382
◽
2016 ◽
Vol 64
◽
pp. 589-593
◽
2017 ◽
Vol 17
(1)
◽
pp. 577-580
◽
2014 ◽
Vol 605
◽
pp. 113-117
◽