Formation of self‐aligned CoSi2 on selective epitaxial growth silicon layer on (001)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography

1996 ◽  
Vol 69 (24) ◽  
pp. 3692-3694 ◽  
Author(s):  
J. Y. Yew ◽  
H. C. Tseng ◽  
L. J. Chen ◽  
K. Nakamura ◽  
C. Y. Chang
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Silicon Layer ◽  
Selective Epitaxial Growth

Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography

1996 ◽  
Vol 427 ◽  
Author(s):  
J. Y. Yew ◽  
L. J. Chen ◽  
K. Nakamura
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Stress Measurement ◽  
Deep Submicron ◽  
Film Stress ◽  
Size And Shape ◽  
Thin Film Stress ◽  
Single Orientation

AbstractEpitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.

Controlled III–V semiconductor cluster nucleation and epitaxial growth via electron‐beam lithography

1995 ◽  
Vol 66 (11) ◽  
pp. 1343-1345 ◽  
Author(s):  
J. W. Sleight ◽  
R. E. Welser ◽  
L. J. Guido ◽  
M. Amman ◽  
M. A. Reed
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Semiconductor Cluster

Properties and Mechanism of Si Selective Epitaxial Growth on Al2O3using Electron Beam Irradiation

1993 ◽  
Vol 32 (Part 1, No. 6A) ◽  
pp. 2582-2586 ◽  
Author(s):  
Makoto Ishida ◽  
Takashi Tomita ◽  
Masahiko Fujita ◽  
Tetsuro Nakamura
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Selective Epitaxial Growth

Selective Epitaxial Growth of Silicon Layer Using Batch-Type Equipment for Vertical Diode Application to Next Generation Memories

2019 ◽  
Vol 28 (1) ◽  
pp. 281-286 ◽  
Author(s):  
Kong-Soo Lee ◽  
Dae-Han Yoo ◽  
Young-Sub Yoo ◽  
Jae-Jong Han ◽  
Seok-Sik Kim ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silicon Layer ◽  
Next Generation ◽  
Selective Epitaxial Growth ◽  
Batch Type
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