Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction

2002 ◽  
Vol 80 (13) ◽  
pp. 2278-2280 ◽  
Author(s):  
Akio Toda ◽  
Nobuyuki Ikarashi ◽  
Haruhiko Ono ◽  
Kensuke Okonogi
Keyword(s):  
Electron Diffraction ◽  
Lattice Strain ◽  
Convergent Beam Electron Diffraction ◽  
Slip Systems ◽  
Shallow Trench Isolation ◽  
Beam Electron ◽  
Trench Isolation ◽  
Local Lattice ◽  
Convergent Beam ◽  
The Relationship

Observation of Splitting HOLZ Lines Around Shallow Trench Isolation Structures by Convergent Beam Electron Diffraction

2004 ◽  
Vol 10 (S02) ◽  
pp. 584-585 ◽  
Author(s):  
Vincent Hou ◽  
Du Li
Keyword(s):  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Shallow Trench Isolation ◽  
Beam Electron ◽  
Trench Isolation ◽  
Convergent Beam

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

scholarly journals Analysis of Nano-scale Strain Near Shallow Trench Isolation Structures by Energy-filtered Convergent Beam Electron Diffraction

2006 ◽  
Vol 12 (S02) ◽  
pp. 938-939
Author(s):  
P Zhang ◽  
J Mardinly ◽  
O Karpenko ◽  
A Istratov ◽  
H He ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Shallow Trench Isolation ◽  
Beam Electron ◽  
Nano Scale ◽  
Trench Isolation ◽  
Convergent Beam

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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