Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier

H. J. Shim; I. J. Hwang; K. S. Kim; B. K. Cho; Jin-Tae Kim; J. H. Sok

doi:10.1063/1.1488252

Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier

Journal of Applied Physics ◽

10.1063/1.1488252 ◽

2002 ◽

Vol 92 (2) ◽

pp. 1095-1098 ◽

Cited By ~ 9

Author(s):

H. J. Shim ◽

I. J. Hwang ◽

K. S. Kim ◽

B. K. Cho ◽

Jin-Tae Kim ◽

...

Keyword(s):

Voltage Dependence ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunnel Barrier

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Tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy thin film of Co2Cr0.6Fe0.4Al and a MgO tunnel barrier

Journal of Applied Physics ◽

10.1063/1.2718284 ◽

2007 ◽

Vol 101 (8) ◽

pp. 083906 ◽

Cited By ~ 39

Author(s):

Takao Marukame ◽

Masafumi Yamamoto

Keyword(s):

Thin Film ◽

Heusler Alloy ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunnel Barrier ◽

Alloy Thin Film ◽

Tunnel Magnetoresistance ◽

Full Heusler

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Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions With a Rocksalt ZnO/MgO Bilayer Tunnel Barrier

Physical Review Applied ◽

10.1103/physrevapplied.11.064032 ◽

2019 ◽

Vol 11 (6) ◽

Cited By ~ 4

Author(s):

Hidekazu Saito ◽

Sai Krishna Narayananellore ◽

Norihiro Matsuo ◽

Naoki Doko ◽

Shintaro Kon ◽

...

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Tunnel Barrier

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Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2006.10.919 ◽

2007 ◽

Vol 310 (2) ◽

pp. 2006-2008 ◽

Cited By ~ 17

Author(s):

H. Kijima ◽

T. Ishikawa ◽

T. Marukame ◽

K.-I. Matsuda ◽

T. Uemura ◽

...

Keyword(s):

Thin Film ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunnel Barrier

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Bias Voltage Dependence of Tunneling Anisotropic Magnetoresistance in Magnetic Tunnel Junctions with MgO andAl2O3Tunnel Barriers

Physical Review Letters ◽

10.1103/physrevlett.99.226602 ◽

2007 ◽

Vol 99 (22) ◽

Cited By ~ 81

Author(s):

Li Gao ◽

Xin Jiang ◽

See-Hun Yang ◽

J. D. Burton ◽

Evgeny Y. Tsymbal ◽

...

Keyword(s):

Bias Voltage ◽

Voltage Dependence ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Anisotropic Magnetoresistance ◽

Bias Voltage Dependence

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Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions

Physical Review B ◽

10.1103/physrevb.87.094419 ◽

2013 ◽

Vol 87 (9) ◽

Cited By ~ 20

Author(s):

Witold Skowroński ◽

Maciej Czapkiewicz ◽

Marek Frankowski ◽

Jerzy Wrona ◽

Tomasz Stobiecki ◽

...

Keyword(s):

Ferromagnetic Resonance ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Spin Transfer ◽

Tunnel Barrier ◽

Barrier Thickness

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Reliability Characteristics for Magnetic Tunnel Junctions with MgO Tunnel Barrier in Low Voltage

10.7567/ssdm.2017.ps-12-13 ◽

2017 ◽

Author(s):

B. So ◽

C. Choi ◽

H. Sukegawa ◽

S. Mitani ◽

Y. Song

Keyword(s):

Low Voltage ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunnel Barrier ◽

Reliability Characteristics

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Fabrication of Magnetic Tunnel Junctions with a Single-Crystalline LiF Tunnel Barrier

10.7567/ssdm.2017.ps-12-10 ◽

2017 ◽

Author(s):

S.K. Narayananellore ◽

N. Doko ◽

N. Matsuo ◽

H. Saito ◽

S. Yuasa

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunnel Barrier ◽

Single Crystalline

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Field sensing characteristics of magnetic tunnel junctions with (001) MgO tunnel barrier

Journal of Applied Physics ◽

10.1063/1.2939265 ◽

2008 ◽

Vol 103 (11) ◽

pp. 113911 ◽

Cited By ~ 29

Author(s):

Dipanjan Mazumdar ◽

Weifeng Shen ◽

Xiaoyong Liu ◽

B. D. Schrag ◽

Matthew Carter ◽

...

Keyword(s):

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunnel Barrier ◽

Field Sensing ◽

Sensing Characteristics

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Voltage dependence of the magnetic state in magnetic tunnel junctions

Journal of Applied Physics ◽

10.1063/1.373301 ◽

2000 ◽

Vol 87 (9) ◽

pp. 5221-5223 ◽

Cited By ~ 10

Author(s):

C. Heide ◽

A. I. Krikunov ◽

Yu. F. Ogrin ◽

P. E. Zilberman ◽

R. J. Elliott

Keyword(s):

Voltage Dependence ◽

Tunnel Junctions ◽

Magnetic State ◽

Magnetic Tunnel Junctions

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Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaO$_{x}$ Tunnel Barrier

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.113002 ◽

2011 ◽

Vol 50 ◽

pp. 113002 ◽

Cited By ~ 2

Author(s):

Suguru Watanabe ◽

Hidekazu Saito ◽

Yusuke Mineno ◽

Shinji Yuasa ◽

Koji Ando

Keyword(s):

Barrier Height ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunnel Barrier ◽

Effective Barrier Height ◽

Effective Barrier

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