Cathodoluminescence studies of exciton localization in GaAs‐AlGaAs single quantum wells

1995 ◽  
Vol 77 (1) ◽  
pp. 396-398 ◽  
Author(s):  
U. Jahn ◽  
K. Fujiwara ◽  
J. Menniger ◽  
H. T. Grahn
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Exciton Localization

Optical investigations and exciton localization in high quality Zn1−xMgxO–ZnO single quantum wells

2007 ◽  
Vol 91 (8) ◽  
pp. 081911 ◽  
Author(s):  
M. Al-Suleiman ◽  
A. El-Shaer ◽  
A. Bakin ◽  
H.-H. Wehmann ◽  
A. Waag
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality ◽  
Exciton Localization

Dynamics of inter- and intra-growth-island exciton localization in GaAs single quantum wells

1991 ◽  
Vol 43 (17) ◽  
pp. 13978-13982 ◽  
Author(s):  
K. Fujiwara ◽  
H. Katahama ◽  
K. Kanamoto ◽  
R. Cingolani ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Exciton Localization

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells

1997 ◽  
Vol 55 (8) ◽  
pp. 5253-5258 ◽  
Author(s):  
R. Grousson ◽  
V. Voliotis ◽  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Exciton Localization

Exciton localization inInxGa1−xAs/GaAs quantum wells observed by temperature-modulated photoluminescence

1991 ◽  
Vol 43 (2) ◽  
pp. 1546-1550 ◽  
Author(s):  
M. Gal ◽  
Z. Y. Xu ◽  
F. Green ◽  
B. F. Usher
Keyword(s):  
Quantum Wells ◽  
Exciton Localization

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

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