Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

1997 ◽  
Vol 82 (5) ◽  
pp. 2671-2675 ◽  
Author(s):  
P. Llinares ◽  
D. Celi ◽  
O. Roux-dit-Buisson ◽  
G. Ghibaudo ◽  
J. A. Chroboczek
Keyword(s):  
Bipolar Junction Transistors ◽  
Base Current ◽  
Polysilicon Emitter

DC extraction of the base and emitter resistances in polysilicon-emitter npn BJTs

1996 ◽  
Vol 74 (S1) ◽  
pp. 172-176 ◽  
Author(s):  
V. Van ◽  
M. J. Deen ◽  
J. Kendall ◽  
D. S. Malhi ◽  
S. Voinigescu ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Junction Transistors ◽  
New Techniques ◽  
Current Range ◽  
Base Current ◽  
Ionization Yield ◽  
Ionization Method ◽  
Ionization Region ◽  
Polysilicon Emitter ◽  
The Impact

Five DC techniques of extracting the base and emitter resistances of polysilicon-emitter npn bipolar junction transistors (BJTs) are presented and compared. The five techniques include three previously published techniques and two new techniques, constant base current and IB–IE plane fitting. Application of the five methods to a 0.8 × 16 μm2 npn BJT shows that all but the method of impact ionization yield comparable Rc and Rbb values at high currents. The impact ionization method, which extracts Rc and Rbb in the impact ionization region and at low base currents, yields markedly different Rc and Rbb values, indicating that the values of the parasitic resistances depend on the current range over which the extraction is performed. Thus the choice of which method is best to use depends on the current range over which Rc and Rbb are to be measured, and the validity of the assumptions used in the method when applied to the device.

Low frequency (1/f ) noise model for the base current in polysilicon emitter bipolar junction transistors

1996 ◽  
Vol 79 (6) ◽  
pp. 3330-3336 ◽  
Author(s):  
A. Mounib ◽  
G. Ghibaudo ◽  
F. Balestra ◽  
D. Pogany ◽  
A. Chantre ◽  
...  
Keyword(s):  
Low Frequency ◽  
Noise Model ◽  
Bipolar Junction Transistors ◽  
Base Current ◽  
Polysilicon Emitter

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

GAIN DEGRADATION AND ENHANCED LOW-DOSE-RATE SENSITIVITY IN BIPOLAR JUNCTION TRANSISTORS

2004 ◽  
Vol 14 (02) ◽  
pp. 503-517 ◽  
Author(s):  
R. D. SCHRIMPF
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Surface Recombination ◽  
Rate Sensitivity ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Base Current ◽  
Low Dose Rate ◽  
Two Factors ◽  
Recombination Current

The current gain of irradiated bipolar junction transistors decreases due to increased recombination current in the emitter-base depletion region and the neutral base. This recombination current depends on the interaction of two factors: (1) decreased minority-carrier lifetime at the Si / SiO 2 interface or in the bulk Si and (2) changes in surface potential caused by charge in the oxide. In npn transistors, these two factors both result in increased base current, while in pnp devices, positive charge in the oxide moderates the increase in base current due to surface recombination. In some technologies, the amount of degradation that occurs at a given total dose increases as the dose rate decreases. This enhanced low-dose-rate sensitivity results from space-charge effects produced by slowly transporting holes and protons in the oxide that covers the emitterbase junction.

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