Tunneling conductance and magnetoresistance in topological insulator Fi/I/Fi/d-wave superconductor junctions

2012 ◽  
Vol 112 (10) ◽  
pp. 103919 ◽  
Author(s):  
R. Vali ◽  
Mehran Vali
2000 ◽  
Vol 17 (10) ◽  
pp. 760-761 ◽  
Author(s):  
Li Shao-Xiong ◽  
Tao Hong-Jie ◽  
Xuan Yi ◽  
Zhao Bai-Ru ◽  
Zhao Zhong-Xian

1997 ◽  
Vol 11 (29) ◽  
pp. 1285-1294 ◽  
Author(s):  
Biplab Chattopadhyay ◽  
Joydev Lahiri ◽  
A. N. Das

Tunneling conductance for N-I-S and S-I-S tunnel junctions are calculated within the framework of an extended van-Hove singularity in the single particle density of states of the superconducting electrode. Results from our calculations are compared with the conductance data of N-I-S and S-I-S junctions consisting of high-T c superconductors. Possible interpretation of the photoemission intensity curves, in terms of the quasiparticle density of states, is considered and predictions are made for conductance including a d-wave pseudogap in the quasiparticle dispersion.


2003 ◽  
Vol 17 (18n20) ◽  
pp. 3284-3292
Author(s):  
Chia-Ren Hu

Xu et al. observed enhanced Nernst effect and Iguchi et al. observed patched diamagnetism, both well above Tc in underdoped high-Tc superconductors (HTSCs). A new mechanism is proposed here, which seems to naturally explain, at least qualitatively, these observations, as well as the d-wave nature and continuity of pseudogap and pairing gap, the tunneling conductance above Tc, as well as T*(x), Tν(x), Tc(x), etc. This mechanism combines features of dynamic charged stripes, preformed pairs, and spin-bags: At appropriete doping levels, the doped holes (and perhaps also electrons) will promote the formation of anti-phase islands in short-range anti-ferromagnetic order. On the boundary of each such island reside two doped carriers; the unscreened Coulomb repulsion between them stabilizes the island's size. Superconductivity results when such "pre-formed pairs" Bose-condense.


2013 ◽  
Vol 117 (4) ◽  
pp. 718-727
Author(s):  
Yu. V. Kopaev ◽  
V. V. Kapaev ◽  
V. I. Belyavskii
Keyword(s):  

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