Extended coherence length of spatially oscillating electron-spin polarization in dilute-magnetic-semiconductor quantum wells

2013 ◽  
Author(s):  
Takuma Tsuchiya
Keyword(s):  
Quantum Wells ◽  
Spin Polarization ◽  
Electron Spin ◽  
Dilute Magnetic Semiconductor ◽  
Coherence Length ◽  
Magnetic Semiconductor ◽  
Electron Spin Polarization ◽  
Semiconductor Quantum Wells

Electron-spin polarization near the Fermi level inn-type modulation-doped semiconductor quantum wells

1999 ◽  
Vol 59 (12) ◽  
pp. R7813-R7816 ◽  
Author(s):  
A. L. C. Triques ◽  
J. Urdanívia ◽  
F. Iikawa ◽  
M. Z. Maialle ◽  
J. A. Brum ◽  
...  
Keyword(s):  
Fermi Level ◽  
Quantum Wells ◽  
Spin Polarization ◽  
Electron Spin ◽  
Electron Spin Polarization ◽  
Semiconductor Quantum Wells

MAGNETIZATION AND MAGNETIC PHASES OF CONDUCTION-BAND DILUTE-MAGNETIC-SEMICONDUCTOR QUANTUM WELLS WITH NON-STEP-LIKE DENSITY OF STATES

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3745-3748
Author(s):  
CONSTANTINOS SIMSERIDES
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Conduction Band ◽  
Density Of States ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Parallel Magnetic Field ◽  
Magnetic Phases ◽  
Semiconductor Quantum Wells

We study the magnetization and the magnetic phases of II-VI-based n-doped non-magnetic-semiconductor (NMS) / narrow to wide dilute-magnetic-semiconductor (DMS) / n-doped NMS quantum wells under in-plane magnetic field. The parallel magnetic field is used as a tool, in order to achieve non-step-like density of states in these -appropriate for conduction-band spintronics- structures.

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