scholarly journals Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor

AIP Advances ◽  
2014 ◽  
Vol 4 (12) ◽  
pp. 123007
Author(s):  
N. Kurose ◽  
N. Iwata ◽  
I. Kamiya ◽  
Y. Aoyagi
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
Photo Sensor ◽  
Via Holes ◽  
Metal Organic ◽  
Deep Ultraviolet ◽  
Aln Buffer ◽  
Organic Chemical Vapor Deposition

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

Growth of High-Quality In$_{0.4}$Ga$_{0.6}$N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

2011 ◽  
Vol 4 (11) ◽  
pp. 115501 ◽  
Author(s):  
Binh-Tinh Tran ◽  
Edward-Yi Chang ◽  
Kung-Liang Lin ◽  
Yuen-Yee Wong ◽  
Kartika Chandra Sahoo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Photoluminescence and lasing characteristics of single nonpolar GaN microwires

RSC Advances ◽  
2017 ◽  
Vol 7 (35) ◽  
pp. 21541-21546
Author(s):  
S. S. Yan ◽  
A. Q. Chen ◽  
Y. Y. Wu ◽  
H. Zhu ◽  
X. H. Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Nonpolar Gan

Nonpolar a-axial GaN MWs were fabricated on a patterned Si substrate via metal–organic chemical vapor deposition (MOCVD) without the assistance of any catalyst.

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