Development of micro-four-point probe in a scanning tunneling microscope for in situ electrical transport measurement

2015 ◽  
Vol 86 (5) ◽  
pp. 053903 ◽  
Author(s):  
Jian-Feng Ge ◽  
Zhi-Long Liu ◽  
Chun-Lei Gao ◽  
Dong Qian ◽  
Canhua Liu ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Electrical Transport ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Transport Measurement

scholarly journals The design and the performance of an ultrahigh vacuum 3He fridge-based scanning tunneling microscope with a double deck sample stage for in-situ tip treatment

2019 ◽  
Vol 196 ◽  
pp. 180-185
Author(s):  
Syu-You Guan ◽  
Hsien-Shun Liao ◽  
Bo-Jing Juang ◽  
Shu-Cheng Chin ◽  
Tien-Ming Chuang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Ultrahigh Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscope

ELECTRICAL CONDUCTION THROUGH SURFACE SUPERSTRUCTURES MEASURED BY MICROSCOPIC FOUR-POINT PROBES

2003 ◽  
Vol 10 (06) ◽  
pp. 963-980 ◽  
Author(s):  
SHUJI HASEGAWA ◽  
ICHIRO SHIRAKI ◽  
FUHITO TANABE ◽  
REI HOBARA ◽  
TAIZO KANAGAWA ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Conductivity Measurements ◽  
Crystal Surfaces ◽  
Tunneling Microscope ◽  
Silicon Chips ◽  
Surface Sensitivity ◽  
Scanning Electron ◽  
Probe Spacing

For in-situ measurements of the local electrical conductivity of well-defined crystal surfaces in ultrahigh vacuum, we have developed two kinds of microscopic four-point probe methods. One involves a "four-tip STM prober," in which four independently driven tips of a scanning tunneling microscope (STM) are used for measurements of four-point probe conductivity. The probe spacing can be changed from 500 nm to 1 mm. The other method involves monolithic micro-four-point probes, fabricated on silicon chips, whose probe spacing is fixed around several μm. These probes are installed in scanning-electron-microscopy/electron-diffraction chambers, in which the structures of sample surfaces and probe positions are observed in situ. The probes can be positioned precisely on aimed areas on the sample with the aid of piezoactuators. By the use of these machines, the surface sensitivity in conductivity measurements has been greatly enhanced compared with the macroscopic four-point probe method. Then the conduction through the topmost atomic layers (surface-state conductivity) and the influence of atomic steps on conductivity can be directly measured.

Compact low temperature scanning tunneling microscope with in-situ sample preparation capability

2015 ◽  
Vol 86 (9) ◽  
pp. 093707 ◽  
Author(s):  
Jungdae Kim ◽  
Hyoungdo Nam ◽  
Shengyong Qin ◽  
Sang-ui Kim ◽  
Allan Schroeder ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sample Preparation ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Temperature Scanning

scholarly journals Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

2017 ◽  
Vol 8 ◽  
pp. 2389-2395 ◽  
Author(s):  
Sumit Tewari ◽  
Koen M Bastiaans ◽  
Milan P Allan ◽  
Jan M van Ruitenbeek
Keyword(s):  
Atomic Structure ◽  
Scanning Tunneling Microscope ◽  
Critical Role ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Stm Tips

Scanning tunneling microscopes (STM) are used extensively for studying and manipulating matter at the atomic scale. In spite of the critical role of the STM tip, procedures for controlling the atomic-scale shape of STM tips have not been rigorously justified. Here, we present a method for preparing tips in situ while ensuring the crystalline structure and a reproducibly prepared tip structure up to the second atomic layer. We demonstrate a controlled evolution of such tips starting from undefined tip shapes.

scholarly journals Solvent-dependent conductance decay constants in single cluster junctions

2016 ◽  
Vol 7 (4) ◽  
pp. 2701-2705 ◽  
Author(s):  
Bonnie Choi ◽  
Brian Capozzi ◽  
Seokhoon Ahn ◽  
Ari Turkiewicz ◽  
Giacomo Lovat ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Electrical Transport ◽  
Molecular Clusters ◽  
Scanning Tunneling ◽  
Break Junction ◽  
Metal Chalcogenide ◽  
Tunneling Microscope ◽  
Decay Constants ◽  
Single Cluster

We study single cluster electrical transport in a series of metal chalcogenide molecular clusters using scanning tunneling microscope-based break-junction measurements.

scholarly journals Single-electron transport through stabilised silicon nanocrystals

Nanoscale ◽  
2018 ◽  
Vol 10 (29) ◽  
pp. 13949-13958 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Elke Scheer
Keyword(s):  
Electron Transport ◽  
Electronic Transport ◽  
Single Particle ◽  
Scanning Tunneling Microscope ◽  
Silicon Nanocrystals ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Transport Measurement ◽  
Single Electron Transport ◽  
Particle Level

The electronic transport measurement of luminescent silicon nanocrystals at the single particle level by using a cryogenic scanning tunneling microscope (300 mK).

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