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Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors
Applied Physics Letters
◽
10.1063/5.0038416
◽
2021
◽
Vol 118
(12)
◽
pp. 123504
Author(s):
Ablat Abliz
◽
Xiongxiong Xue
◽
Xingqiang Liu
◽
Guoli Li
◽
Liming Tang
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
High Performance
◽
Rational Design
◽
Doped Zno
◽
Co Doped
Download Full-text
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A high-temperature resistant polyimide gate insulator surface-modified with a YOx interlayer for high-performance, solution-processed Li-doped ZnO thin-film transistors
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◽
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