Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

Xiaolu Guo; Yaozong Zhong; Xin Chen; Yu Zhou; Shuai Su; Shumeng Yan; Jianxun Liu; Xiujian Sun; Qian Sun; Hui Yang

doi:10.1063/5.0049706

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

Applied Physics Letters ◽

10.1063/5.0049706 ◽

2021 ◽

Vol 118 (24) ◽

pp. 243501

Author(s):

Xiaolu Guo ◽

Yaozong Zhong ◽

Xin Chen ◽

Yu Zhou ◽

Shuai Su ◽

...

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Gan On Si

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Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm²

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3108951 ◽

2021 ◽

pp. 1-5

Author(s):

Xiaolu Guo ◽

Yaozong Zhong ◽

Yu Zhou ◽

Shuai Su ◽

Xin Chen ◽

...

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Gan On Si

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Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures

Applied Physics Express ◽

10.35848/1882-0786/ac2260 ◽

2021 ◽

Vol 14 (10) ◽

pp. 104002

Author(s):

Jiabo Chen ◽

Zhihong Liu ◽

Haiyong Wang ◽

Xiufeng Song ◽

Zhaoke Bian ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Current Transport ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Gan On Si

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Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

IEEE Transactions on Power Electronics ◽

10.1109/tpel.2020.3008226 ◽

2021 ◽

Vol 36 (2) ◽

pp. 1269-1273

Author(s):

Luca Nela ◽

Remco Van Erp ◽

Georgios Kampitsis ◽

Halil Kerim Yildirim ◽

Jun Ma ◽

...

Keyword(s):

Integrated Circuits ◽

Schottky Barrier ◽

High Frequency ◽

Schottky Barrier Diodes ◽

High Frequency Power ◽

Gan On Si ◽

Frequency Power

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Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

IEEE Electron Device Letters ◽

10.1109/led.2018.2841959 ◽

2018 ◽

Vol 39 (7) ◽

pp. 1034-1037 ◽

Cited By ~ 16

Author(s):

Chao Liu ◽

Riyaz Abdul Khadar ◽

Elison Matioli

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Monolithically Integrated ◽

Gan On Si

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ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric

2021 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps46558.2021.9405163 ◽

2021 ◽

Author(s):

Eliana Acurio ◽

Lionel Trojman ◽

Brice de Jaeger ◽

Benoit Bakeroot ◽

Stefaan Decoutere

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Gan On Si

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Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

IEEE Electron Device Letters ◽

10.1109/led.2019.2957700 ◽

2020 ◽

Vol 41 (1) ◽

pp. 99-102 ◽

Cited By ~ 4

Author(s):

Luca Nela ◽

Georgios Kampitsis ◽

Jun Ma ◽

Elison Matioli

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Monolithically Integrated ◽

Fast Switching ◽

Power Circuits ◽

Gan On Si

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Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT

2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) ◽

10.1109/wipda.2015.7369293 ◽

2015 ◽

Cited By ~ 2

Author(s):

D. M. Risbud ◽

K. Pedrotti ◽

M. Power ◽

J. W. Pomeroy ◽

M. Kuball

Keyword(s):

Schottky Barrier ◽

High Voltage ◽

Thermal Characterization ◽

Schottky Barrier Diodes ◽

On Chip ◽

Gan On Si

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2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Applied Physics Letters ◽

10.1063/1.5012866 ◽

2018 ◽

Vol 112 (5) ◽

pp. 052101 ◽

Cited By ~ 16

Author(s):

Jun Ma ◽

Elison Matioli

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Schottky Barrier Diodes ◽

Low Leakage ◽

Low Leakage Current ◽

Gan On Si

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Gallium Oxide Schottky Barrier Diodes

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.136.479 ◽

2016 ◽

Vol 136 (4) ◽

pp. 479-483

Author(s):

Masataka Higashiwaki ◽

Kohei Sasaki ◽

Hisashi Murakami ◽

Yoshinao Kumagai ◽

Akito Kuramata

Keyword(s):

Schottky Barrier ◽

Gallium Oxide ◽

Schottky Barrier Diodes

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Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity

Applied Physics Express ◽

10.35848/1882-0786/abaf0e ◽

2020 ◽

Vol 13 (9) ◽

pp. 096502

Author(s):

Yu Lu ◽

Feng Zhou ◽

Weizong Xu ◽

Dongsheng Wang ◽

Yuanyang Xia ◽

...

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Turn On ◽

High Uniformity

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