Two-Atomic-Layered Optoelectronic Device Enabled by Charge Separation on Graphene/Semiconductor Interface

2022 ◽  
Author(s):  
Qirong Yang ◽  
Jianxin Guan ◽  
Jingwen Deng ◽  
Zihan Xu ◽  
Zhihao Yu ◽  
...  
Keyword(s):  
Charge Separation ◽  
Optoelectronic Device ◽  
Semiconductor Interface

scholarly journals Efficient Solid-State Photon Upconversion Enabled by Spin Inversion at Organic Semiconductor Interface

2021 ◽  
Author(s):  
Seiichiro Izawa ◽  
Masahiro Hiramoto
Keyword(s):  
Solid State ◽  
Organic Semiconductor ◽  
Charge Separation ◽  
Near Infrared ◽  
Semiconductor Interface ◽  
Problematic Issue ◽  
Light Excitation ◽  
Conventional Systems ◽  
Triplet Formation ◽  
Spin Inversion

We realized solid-state UC with 100 times higher efficiency than a conventional system by discovering a novel UC mechanism in bilayer organic semiconductor heterojunctions. The UC occurred through spin inversion during the charge separation and recombination at the interface. The key to the success was the triplet formation at the interface, as this could avoid the loss process during triplet diffusion, which is a problematic issue in conventional systems. As a result of this finding, efficient UC from near-infrared to visible light on flexible thin films under LED light excitation was made possible.

scholarly journals Coulomb Barrier for Charge Separation at an Organic Semiconductor Interface

2008 ◽  
Vol 101 (19) ◽  
Author(s):  
Matthias Muntwiler ◽  
Qingxin Yang ◽  
William A. Tisdale ◽  
X.-Y. Zhu
Keyword(s):  
Organic Semiconductor ◽  
Charge Separation ◽  
Coulomb Barrier ◽  
Semiconductor Interface

scholarly journals Metal/Semiconductor Nanocomposites for Photocatalysis: Fundamentals, Structures, Applications and Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 359 ◽  
Author(s):  
Yong-sheng Fu ◽  
Jun Li ◽  
Jianguo Li
Keyword(s):  
Surface Plasmon Resonance ◽  
Future Development ◽  
Charge Separation ◽  
Environmental Remediation ◽  
High Performance ◽  
Green Technology ◽  
Human Society ◽  
Semiconductor Interface ◽  
Semiconductor Nanocomposites ◽  
Synthetic Approaches

Due to the capability of utilizing light energy to drive chemical reactions, photocatalysis has been widely accepted as a green technology to help us address the increasingly severe environment and energy issues facing human society. To date, a large amount of research has been devoted to enhancing the properties of photocatalysts. As reported, coupling semiconductors with metals is one of the most effective methods to achieve high-performance photocatalysts. The excellent properties of metal/semiconductor (M/S) nanocomposite photocatalysts originate in two aspects: (i) improved charge separation at the metal-semiconductor interface; and (ii) increased absorption of visible light due to the surface plasmon resonance of metals. So far, many M/S nanocomposite photocatalysts with different structures have been developed for the application in environmental remediation, selective organic transformation, hydrogen evolution, and disinfection. Herein, we will give a review on the M/S nanocomposite photocatalysts, regarding their fundamentals, structures (as well as their typical synthetic approaches), applications and properties. Finally, we will also present our perspective on the future development of M/S nanocomposite photocatalysts.

scholarly journals Efficient Solid-State Photon Upconversion Enabled by Spin Inversion at Organic Semiconductor Interface

2021 ◽  
Author(s):  
Seiichiro Izawa ◽  
Masahiro Hiramoto
Keyword(s):  
Solid State ◽  
Organic Semiconductor ◽  
Charge Separation ◽  
Near Infrared ◽  
Semiconductor Interface ◽  
Problematic Issue ◽  
Light Excitation ◽  
Conventional Systems ◽  
Triplet Formation ◽  
Spin Inversion

We realized solid-state UC with 100 times higher efficiency than a conventional system by discovering a novel UC mechanism in bilayer organic semiconductor heterojunctions. The UC occurred through spin inversion during the charge separation and recombination at the interface. The key to the success was the triplet formation at the interface, as this could avoid the loss process during triplet diffusion, which is a problematic issue in conventional systems. As a result of this finding, efficient UC from near-infrared to visible light on flexible thin films under LED light excitation was made possible.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

SURFACE MODES AT A FERRITE-SEMICONDUCTOR INTERFACE

1984 ◽  
Vol 45 (C5) ◽  
pp. C5-275-C5-284
Author(s):  
A. D. Boardman ◽  
A. K. Irving
Keyword(s):  
Semiconductor Interface ◽  
Surface Modes

Physical stage of photosynthesis charge separation

2016 ◽  
Vol 186 (6) ◽  
pp. 597-625 ◽  
Author(s):  
Andrei G. Yakovlev ◽  
Vladimir A. Shuvalov
Keyword(s):  
Charge Separation
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