A simple replacement of tungsten filament hot cathodes by DC heated LaB6 rod and its noise characteristics with laser-induced fluorescence

2021 ◽  
Vol 92 (12) ◽  
pp. 123503
Author(s):  
Di Jiang ◽  
Chi-Shung Yip ◽  
Wei Zhang ◽  
Chen-yao Jin ◽  
Guo-Sheng Xu ◽  
...  
1990 ◽  
Vol 62 (7) ◽  
pp. 680-683 ◽  
Author(s):  
Yuji. Oki ◽  
Hisanori. Uda ◽  
Chikahisa. Honda ◽  
Mitsuo. Maeda ◽  
Jun. Izumi ◽  
...  

Author(s):  
George Christov ◽  
Bolivar J. Lloyd

A new high intensity grid cap has been designed for the RCA-EMU-3 electron microscope. Various parameters of the new grid cap were investigated to determine its characteristics. The increase in illumination produced provides ease of focusing on the fluorescent screen at magnifications from 1500 to 50,000 times using an accelerating voltage of 50 KV.The EMU-3 type electron gun assembly consists of a V-shaped tungsten filament for a cathode with a thin metal threaded cathode shield and an anode with a central aperture to permit the beam to course the length of the column. The cathode shield is negatively biased at a potential of several hundred volts with respect to the filament. The electron beam is formed by electrons emitted from the tip of the filament which pass through an aperture of 0.1 inch diameter in the cap and then it is accelerated by the negative high voltage through a 0.625 inch diameter aperture in the anode which is at ground potential.


2019 ◽  
Author(s):  
Rainer Schädler ◽  
◽  
Dominic Hänni ◽  
Anestis Kalfas ◽  
Reza Abhari ◽  
...  

1998 ◽  
Vol 22 (S_3_PMRS_98) ◽  
pp. S3_5-8
Author(s):  
Y. Hirayama ◽  
Y. Honda ◽  
K. Ito ◽  
T. Takeuchi ◽  
M. Futamoto

1995 ◽  
Vol 115 (2) ◽  
pp. 99-106
Author(s):  
Keiichi Uchimura ◽  
Michiharu Shoji ◽  
Tairo Itho ◽  
Jen-Shih Chang

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.


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