Optical characteristics of LaNiO3 thin films in the terahertz–infrared frequency range

2022 ◽  
Vol 131 (2) ◽  
pp. 025305
Author(s):  
Vadim S. Nozdrin ◽  
Gennadiy A. Komandin ◽  
Igor E. Spektor ◽  
Nikita V. Chernomyrdin ◽  
Dmitry S. Seregin ◽  
...  
Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.


2018 ◽  
Vol 5 (2) ◽  
pp. 171179 ◽  
Author(s):  
Bramaramba Gnapareddy ◽  
Sreekantha Reddy Dugasani ◽  
Junyoung Son ◽  
Sung Ha Park

DNA is considered as a useful building bio-material, and it serves as an efficient template to align functionalized nanomaterials. Riboflavin (RF)-doped synthetic double-crossover DNA (DX-DNA) lattices and natural salmon DNA (SDNA) thin films were constructed using substrate-assisted growth and drop-casting methods, respectively, and their topological, chemical and electro-optical characteristics were evaluated. The critical doping concentrations of RF ([RF] C , approx. 5 mM) at given concentrations of DX-DNA and SDNA were obtained by observing the phase transition (from crystalline to amorphous structures) of DX-DNA and precipitation of SDNA in solution above [RF] C . [RF] C are verified by analysing the atomic force microscopy images for DX-DNA and current, absorbance and photoluminescence (PL) for SDNA. We study the physical characteristics of RF-embedded SDNA thin films, using the Fourier transform infrared spectrum to understand the interaction between the RF and DNA molecules, current to evaluate the conductance, absorption to understand the RF binding to the DNA and PL to analyse the energy transfer between the RF and DNA. The current and UV absorption band of SDNA thin films decrease up to [RF] C followed by an increase above [RF] C . By contrast, the PL intensity illustrates the reverse trend, as compared to the current and UV absorption behaviour as a function of the varying [RF]. Owing to the intense PL characteristic of RF, the DNA lattices and thin films with RF might offer immense potential to develop efficient bio-sensors and useful bio-photonic devices.


2017 ◽  
Vol 704 ◽  
pp. 676-682 ◽  
Author(s):  
Kang Sun ◽  
Ling-Fang Xu ◽  
Cong Mao ◽  
Xing Feng ◽  
Jia-Yu Liang ◽  
...  

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.


Author(s):  
F. A. Miranda ◽  
W. L. Gordon ◽  
K. B. Bhasin ◽  
V. O. Heinen ◽  
J. D. Warner ◽  
...  

2017 ◽  
Vol 4 (5) ◽  
pp. 6365-6371 ◽  
Author(s):  
R. Prachachet ◽  
P. Buranasiri ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
S.Limwichean ◽  
...  

2019 ◽  
Vol 12 (25) ◽  
pp. 80-88
Author(s):  
Salma M. Shaban

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.


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