Epitaxial Bi-layered perovskite ferroelectric thin film heterostructures by large area pulsed laser deposition

1999 ◽  
Vol 225 (1) ◽  
pp. 201-220 ◽  
Author(s):  
A. Pignolet ◽  
M. Alexe ◽  
K. M. Satyalakshmi ◽  
St. Senz ◽  
D. Hesse ◽  
...  
2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.


AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085005 ◽  
Author(s):  
Yuqing Hu ◽  
Qingxiu Xie ◽  
Ruihong Liang ◽  
Xiangyong Zhao ◽  
Zhiyong Zhou ◽  
...  

2014 ◽  
Vol 161 (6) ◽  
pp. F698-F702 ◽  
Author(s):  
Young-Wan Ju ◽  
Areum Jun ◽  
Atsushi Inoishi ◽  
Shintaro Ida ◽  
Tak-hyoung Lim ◽  
...  

1996 ◽  
Vol 433 ◽  
Author(s):  
A. Pignolet ◽  
C. Curran ◽  
S. Welke ◽  
S. Senz ◽  
M. Alexe ◽  
...  

AbstractThin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and SrBi2Ta2O9 have been epitaxially deposited by pulsed laser deposition (PLD) on SrTiO3 single crystal substrates. Bi4 Ti3O12 has been deposited as well on a CeO2JYSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi4Ti3O12 has also been deposited on a whole (100)-oriented 3”- Si wafer. The obtained films have a uniform thickness over a diameter greater than 50 mm, corresponding to an area of about 20 cm2. It is likely that homogeneous deposition on entire wafers of 3-inch in diameter will be accomplished in the near future. The composition, structure, and electrical properties of the films are presented.


1997 ◽  
Vol 202 (1) ◽  
pp. 285-298 ◽  
Author(s):  
Alain Pignolet ◽  
Susanne Welke ◽  
Christopher Curran ◽  
Marin Alexe ◽  
Tephan Senz ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document