Physics-based surface potential, electric field and drain current model of aδp+Si1–xGexgate–drain underlap nanoscale n-TFET

2016 ◽  
pp. 1-14 ◽  
Author(s):  
Rupam Goswami ◽  
Brinda Bhowmick ◽  
Srimanta Baishya
Keyword(s):  
Electric Field ◽  
Surface Potential ◽  
Current Model ◽  
Drain Current

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

2013 ◽  
Vol 114 (18) ◽  
pp. 184502 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. A. Hastas ◽  
N. Choi ◽  
F. Mahmoudabadi ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Amorphous Ingazno

An Analytical Surface-Potential-Based Drain Current Model of Full Depleted Polysilicon TFTs

2018 ◽  
Vol 65 (7) ◽  
pp. 2855-2862 ◽  
Author(s):  
Fei Yu ◽  
Wanling Deng ◽  
Gongyi Huang ◽  
Chuanzhong Xu ◽  
Xiaoyu Ma ◽  
...  
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current

Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors

2008 ◽  
Vol 47 (10) ◽  
pp. 7798-7802 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Tsuyoshi Kuzuoka ◽  
Yuji Kishida ◽  
Yoshiyuki Shimizu ◽  
Masaharu Kirihara ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Current Model ◽  
Drain Current ◽  
Silicon Thin Film

Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs

2012 ◽  
Vol 59 (12) ◽  
pp. 3292-3298 ◽  
Author(s):  
Zhuojun Chen ◽  
Yongguang Xiao ◽  
Minghua Tang ◽  
Ying Xiong ◽  
Jianqiang Huang ◽  
...  
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current ◽  
Double Gate ◽  
Long Channel

scholarly journals A performance Analysis of DM-DG and TM-DG TFETs Analytical Models for Low Power Applications

2021 ◽  
Vol 12 (3) ◽  
pp. 4642-4651
Author(s):  
R.Jeyarohini Et.al
Keyword(s):  
Surface Potential ◽  
Current Model ◽  
Drain Current ◽  
Analytical Models ◽  
Approximation Technique ◽  
Device Modeling ◽  
Fundamental Physics ◽  
Channel Potential ◽  
Physics Modeling ◽  
Improved Performance

Device Modeling is utilized to engendering incipient device models for the demeanor of the electrical devices predicated on fundamental physics. Modeling of the device may also include the creation of  Compact models. An emerging device type of transistor is the Tunnel Field-Effect transistor that achieves compactness and speed during device modeling. This article presents an analytical comparative study of duel material DG TFETs and triple Material DG TFETs with  gate oxide structure . Here the implementation of device modeling is done by solving Poisson’s equation with Parabolic Approximation Technique(PAT).The process of formulation of drain current(Id) model is based on  integrating the BTBT generation. A Transconductance model of the device is additionally developed utilizing this drain current model of TFET. Surface potential is calculated by utilizing the channel potential model. The electrical properties  like Surface potential〖(Ψ〗_(s,i)), Drain current (Id ), and Electric field(Ei)  have been compared for both Duel material DG-TFET and Triple material DG-TFET. The comparison statement of DMDG-TFETs and TMDG-TFETs provide improved performance. The analytical model of the device results are compared with simulated results for DMDG TFET and TMDG TFET and good acquiescent is examined.

Sign in / Sign up

Export Citation Format

Share Document