scholarly journals Friction and Wear Behavior of Single-Crystal Silicon Carbide in Sliding Contact with Various Metals

1979 ◽  
Vol 22 (3) ◽  
pp. 245-256 ◽  
Author(s):  
Kazuhisa Miyoshi ◽  
Donald H. Buckley
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Friction And Wear ◽  
Wear Behavior ◽  
Single Crystal Silicon ◽  
Sliding Contact ◽  
Crystal Silicon ◽  
Friction And Wear Behavior

scholarly journals The Adhesion, Friction, and Wear of Binary Alloys in Contact With Single-Crystal Silicon Carbide

1981 ◽  
Vol 103 (2) ◽  
pp. 180-187 ◽  
Author(s):  
Kazuhisa Miyoshi ◽  
D. H. Buckley
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Coefficient Of Friction ◽  
Friction And Wear ◽  
Single Crystal Silicon ◽  
Solute Concentration ◽  
Crystal Silicon ◽  
Iron Base ◽  
The Coefficient Of Friction ◽  
Adhesion Friction

Sliding friction experiments were conducted with various iron-base alloys (alloying elements were Ti, Cr, Mn, Ni, Rh, and W) in contact with a single-crystal silicon carbide (0001) surface in vacuum. Results indicate atomic size misfit and concentration of alloying elements play a dominant role in controlling adhesion, friction, and wear properties of iron-base binary alloys. The controlling mechanism of the alloy properties is as an intrinsic effect involving the resistance to shear fracture of cohesive bonding in the alloy. The coefficient of friction generally increases with an increase in solute concentration. The coefficient of friction increases as the solute-to-iron atomic radius ratio increases or decreases from unity. Alloys having higher solute concentration produce more transfer to silicon carbide than do alloys having low solute concentrations. The chemical activity of the alloying element is also an important parameter in controlling adhesion and friction of alloys.

scholarly journals Novel Abrasive-Impregnated Pads and Diamond Plates for the Grinding and Lapping of Single-Crystal Silicon Carbide Wafers

2021 ◽  
Vol 11 (4) ◽  
pp. 1783
Author(s):  
Ming-Yi Tsai ◽  
Kun-Ying Li ◽  
Sun-Yu Ji
Keyword(s):  
Silicon Carbide ◽  
Wear Rate ◽  
Single Crystal ◽  
Traditional Method ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Grit ◽  
Ceramic Binder

In this study, special ceramic grinding plates impregnated with diamond grit and other abrasives, as well as self-made lapping plates, were used to prepare the surface of single-crystal silicon carbide (SiC) wafers. This novel approach enhanced the process and reduced the final chemical mechanical planarization (CMP) polishing time. Two different grinding plates with pads impregnated with mixed abrasives were prepared: one with self-modified diamond + SiC and a ceramic binder and one with self-modified diamond + SiO2 + Al2O3 + SiC and a ceramic binder. The surface properties and removal rate of the SiC substrate were investigated and a comparison with the traditional method was conducted. The experimental results showed that the material removal rate (MRR) was higher for the SiC substrate with the mixed abrasive lapping plate than for the traditional method. The grinding wear rate could be reduced by 31.6%. The surface roughness of the samples polished using the diamond-impregnated lapping plate was markedly better than that of the samples polished using the copper plate. However, while the surface finish was better and the grinding efficiency was high, the wear rate of the mixed abrasive-impregnated polishing plates was high. This was a clear indication that this novel method was effective and could be used for SiC grinding and lapping.

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

2010 ◽  
Vol 645-648 ◽  
pp. 239-242 ◽  
Author(s):  
Takuro Tomita ◽  
M. Iwami ◽  
M. Yamamoto ◽  
M. Deki ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Femtosecond Laser ◽  
Single Crystal ◽  
Specific Resistance ◽  
Single Crystal Silicon ◽  
Metal Contacts ◽  
Crystal Silicon ◽  
Current Voltage ◽  
Fs Laser ◽  
Current Voltage Characteristics

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

Friction and wear behavior of laser composite surfaced aluminium with silicon carbide

Wear ◽  
2007 ◽  
Vol 262 (5-6) ◽  
pp. 641-648 ◽  
Author(s):  
J. Dutta Majumdar ◽  
B. Ramesh Chandra ◽  
I. Manna
Keyword(s):  
Silicon Carbide ◽  
Friction And Wear ◽  
Wear Behavior ◽  
Friction And Wear Behavior
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