IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films

Structural and dielectric properties of PLD grown BST thin films

Vacuum ◽  
2019 ◽  
Vol 159 ◽  
pp. 69-75 ◽  
Author(s):  
Reema Gupta ◽  
Vinay Gupta ◽  
Monika Tomar
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films

Dielectric properties of SrTiO3 and BST thin films fabricated using ECR-PEMOCVD

1998 ◽  
Vol 21 (1-4) ◽  
pp. 343-353
Author(s):  
Joon Sung Lee ◽  
Key Soo Kim ◽  
Eunah Kim ◽  
Kwangsoo No
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films

Structural and dielectric properties of Fe-substituted BST thin films grown by laser ablation

2005 ◽  
Vol 117 (1) ◽  
pp. 5-9 ◽  
Author(s):  
L. Radhapiyari ◽  
A.R. James ◽  
O.P. Thakur ◽  
Chandra Prakash
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Laser Ablation ◽  
Bst Thin Films

Broadband Microwave Dielectric Properties of BST Thin Films on Quartz Substrates

2007 ◽  
Vol 356 (1) ◽  
pp. 158-165 ◽  
Author(s):  
K. Venkata Saravanan ◽  
K. Sudheendran ◽  
M. Ghanashyam Krishna ◽  
K. C. James Raju
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Bst Thin Films ◽  
Microwave Dielectric ◽  
Quartz Substrates

Three-Step Deposition Method for Improvement of the Dielectric Properties of BST Thin Films

2012 ◽  
Vol 1397 ◽  
Author(s):  
H. Liu ◽  
V. Avrutin ◽  
C. Zhu ◽  
J.H. Leach ◽  
E. Rowe ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Step Method ◽  
Bst Thin Films ◽  
Different Temperatures ◽  
Different Strains ◽  
High Dielectric

ABSTRACTEpitaixal Ba0.5Sr0.5TiO3 (BST) thin films were grown on SrTiO3 (STO) and DyScO3 substrates by radio-frequency magnetron sputtering system using three-step method which involves a relatively low-temperature (573-773 K) growth of a BST interlayer sandwiched between two BST layers deposited at a high substrate temperature of 1068 K. X-ray diffraction measurement showed different strains on the films with interlayers grown at different temperatures. Post-growth thermal treatment reduced film strain to a great extent (the film strain of a tri-layer film with a 773 K grown interlayer is only -0.001). Comparing with the control films grown at high temperature, three-step technique improved the dielectric properties, especially increased dielectric constant by 60% for BST/STO and 31% for BST/DyScO3, respectively. High dielectric constant of 1631.4 and its tuning of 36.7% were achieved on the BST/STO with an interlayer grown on 773 K.

Orientation Control and Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Films on Pt/Ti/SiO2/Si Substrates with PbO Seeding Layer

2013 ◽  
Vol 741 ◽  
pp. 11-17
Author(s):  
Xiao Hua Sun ◽  
Ya Xia Qiao ◽  
Shuang Hou ◽  
Ying Yang ◽  
Cai Hua Huang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Precursor Solution ◽  
Seeding Layer ◽  
Bst Thin Films ◽  
Si Substrates ◽  
Bst Thin Film

Ba0.6Sr0.4TiO3 (BST) thin films were fabricated by solgel technique on Pt/Ti/SiO2/Si substrate without and with PbO seeding layer from precursor solutions with different concentrations. The crystal structure, surface morphology, dielectric properties and leakage current density of BST thin films are investigated as functions of the concentration of PbO precursor solution. Its found that the growth orientation of BST thin films with PbO seeding layer can be modulated through adjusting the concentration of PbO precursor solution. BST thin film with PbO seeding layer from 0.05 M precursor solution shows the highest dielectric constant and tunability, which may be attributed to the high crystallization and amplitude of the polarization in high (100) preferred orientated films. The leakage current density of BST films increases with the increasing concentration of PbO precursor solution and agrees well with the space-charge-limited current mechanism at room temperature.

Processing and dielectric properties of sol-gel derived bst thin films

1997 ◽  
Vol 15 (1-4) ◽  
pp. 99-106 ◽  
Author(s):  
Danielle M. Tahan ◽  
Ahmad Safari ◽  
Lisa C. Klein
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Bst Thin Films

Effects of Sol Viscosity on Properties of BST Thin Films Prepared by Sol-Gel Method

2010 ◽  
Vol 105-106 ◽  
pp. 676-678
Author(s):  
Zong Hui Zhou ◽  
Jing Liu
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Raw Materials ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Bst Thin Films ◽  
Abo3 Perovskite ◽  
Bst Films ◽  
Crystallization Degree

A series of BST(Ba0.65Sr0.35TiO3) sol with different viscosity were prepared by using Ba(CH3COOH)2, Sr(CH3COOH)2 and Ti(OC4H9)4 as raw materials. The BST thin films were fabricated by sol-gel method and spin-coating process on Si(100) substrates. The effect of sol viscosity on crystallization, microstructure and dielectric properties of BST thin films were analyzed by using X-ray diffractometry, scanning electron microscopy and impedance phase analyzer. The results show that the BST films coated by sol with viscosity of 3.0cp and annealed at 750°C for 1h are basically non-crystalline. The crystallization degree increases with the increase of sol viscosity at the same annealing temperature. The ABO3 perovskite structure is formed when the sol viscosity increases to 3.5cp. With further increasing sol viscosity to 6.0cp, the crystal grains of the film grow well and range very compact, the surface become smooth, and the films have optimal dielectric properties.

Processing effects on the composition and dielectric properties of hydrothermally derived BaxSr(1−x)TiO3 thin films

2001 ◽  
Vol 16 (4) ◽  
pp. 1200-1209 ◽  
Author(s):  
Mark A. McCormick ◽  
Ryan K. Roeder ◽  
Elliott B. Slamovich
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Constants ◽  
Alkaline Solutions ◽  
Processing Route ◽  
Bst Thin Films ◽  
Spin Casting ◽  
Coated Glass ◽  
Glass Substrates ◽  
Current Voltage

Polycrystalline BaxSr(1−x)TiO3 (BST) thin films were processed on Pt-coated glass substrates at temperatures below 100 °C by reacting TiO2 films in alkaline solutions containing Ba2+ and/or Sr2+. The TiO2 was deposited by spin-casting a titanium metalorganic precursor onto Pt-coated glass substrates, followed by pyrolysis in air at 400 °C. Film stoichiometry deviated from the initial solution composition, with a preferred incorporation of Sr2+ into the perovskite lattice. The BST thin films had dielectric constants ranging from 100 to 185 and dielectric loss values below 0.25. Capacitance–voltage and current–voltage relationships were examined to determine the effect of phase stoichiometry and processing route on dielectric properties.

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