Orientation and temperature dependence of the Cd K-shell EXAFS of polycrystalline and single-crystal Cd metal

1987 ◽  
Vol 20 (7) ◽  
pp. 981-992 ◽  
Author(s):  
A P Hitchcock ◽  
T Tyliszczak
Keyword(s):  
Single Crystal ◽  
Temperature Dependence

Temperature dependence of impact deformation behavior of single crystal Ni based superalloy

2015 ◽  
Vol 31 (15) ◽  
pp. 1860-1866 ◽  
Author(s):  
Y. H. Yang ◽  
J. J. Yu ◽  
X. F. Sun ◽  
T. Jin ◽  
H. R. Guan
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Deformation Behavior ◽  
Impact Deformation

TEMPERATURE DEPENDENCE OFRHSIN ALUMINUM‐IMPLANTED LAYER INn‐TYPE SINGLE CRYSTAL SILICON

1969 ◽  
Vol 14 (9) ◽  
pp. 255-258 ◽  
Author(s):  
Tadatsugu Itoh ◽  
Taroh Inada ◽  
Masao Ishiki ◽  
Kenshi Menabe
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

Elastic Constants in C-plane of Single Crystal Bi 2Sr 2Ca Cu 208 between 80 K and 260 K

1990 ◽  
Vol 193 ◽  
Author(s):  
Jin Wu ◽  
Yening Wang ◽  
Yifeng Yan ◽  
Zhongxian Zhao
Keyword(s):  
Shear Modulus ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Elastic Constants ◽  
Wide Temperature Range ◽  
Sound Propagation ◽  
Anisotropic Elasticity ◽  
Ultrasonic Velocities ◽  
Temperature Range

ABSTRACTThe temperature dependence of the in-plane C11 C22. C12 and C66 modes between 80 and 260 K of superconducting crystals of Bi2Sr2Ca1Cu208 have been obtained via the measurements of ultrasonic-velocities. The anisotropic elasticity in the a-b plane of single crystal Bi2 Sr2Ca1Cu2O8 is manifest. The shear modulus of sound propagation along the [110] with the polarization has been also calculated and shows an overall trend of softening over a wide temperature range above Tc. The shear modulus C6 6 shows three obvious softening minima around 240–250 K, 150 K and 100 K.

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

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