scholarly journals Antisite disorder and phase segregation in Mn2NiSn

2022 ◽  
Author(s):  
Samiksha Malik ◽  
Elaine T Dias ◽  
Arun Kumar Nigam ◽  
Kaustubh R Priolkar
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Systematic Study ◽  
Local Structure ◽  
Phase Segregation ◽  
Structural Defects ◽  
Antisite Disorder

Abstract A systematic study of crystal structure, local structure, magnetic and transport properties in quenched and temper annealed Ni2−xMn1+xSn alloys indicate the formation of Mn3Sn type structural defects caused by an antisite disorder between Mn and Sn occupying the Y and Z sublattices of X2YZ Heusler structure. The antisite disorder is caused by the substitution of Ni by Mn at the X sites. On temper annealing, these defects segregate and phase separate into L21 Heusler and D019 Mn3Sn type phases.

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

scholarly journals Study of anisotropic thermal conductivity in textured thermoelectric alloys by Raman spectroscopy

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thermal Transport ◽  
Layered Crystal ◽  
Layered Crystal Structure ◽  
Thermal Transport Properties ◽  
Anisotropic Thermal Conductivity ◽  
P Type

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.

Synthesis, crystal structure and thermoelectric properties of a new metal telluride Ba3Ag3InTe6

2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Type Semiconductor ◽  
P Type

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.

scholarly journals Antisite-disorder engineering in La-based oxide heterostructures via oxygen vacancy control

2018 ◽  
Vol 20 (26) ◽  
pp. 17871-17880 ◽  
Author(s):  
Urmimala Dey ◽  
Swastika Chatterjee ◽  
A. Taraphder
Keyword(s):  
Oxygen Vacancy ◽  
Transport Properties ◽  
Oxygen Vacancies ◽  
Major Effect ◽  
Oxide Heterostructures ◽  
Key Players ◽  
Antisite Defects ◽  
Antisite Disorder

It has been realized lately that disorder, primarily in the form of oxygen vacancies, cation stoichiometry, atomic inter-diffusion and antisite defects, has a major effect on the electronic and transport properties of a 2D electron liquid at oxide hetero-interfaces – the first and the last being the two key players.

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