Recent developments on the magnetic and electrical transport properties of FeRh- and Rh-based heterostructures

Author(s):  
Xiaoyan Zhu ◽  
Yang Xu ◽  
Cuimei Cao ◽  
Tian Shang ◽  
Yali Xie ◽  
...  

Abstract It is fascinating how the binary alloy FeRh has been the subject of a vast number of studies almost solely for a single-phase transition. This is, however, reasonable, considering how various degrees of freedom are intertwined around this phase transition. Furthermore, the tunability of this phase transition—the large response to tuning parameters, such as electric field and strain—endows FeRh huge potential in applications. Compared to the bulk counterpart, FeRh in the thin-film form is superior in many aspects: Materials in thin-film form are often more technologically relevant in the first place; in addition, the substrates add extra dimensions to the tunability, especially when the substrate itself is multiferroic. Here we review recent developments on the magnetic and transport properties of heterostructures based on FeRh and its end-member Rh, with the latter providing a new route to exploiting spin-orbit interactions in functional spintronic heterostructures other than the more often employed 5d metals. The methods utilized in the investigation of the physical properties in these systems, and the design principles employed in the engineering thereof may conceivably be extended to similar phase transitions to other magnetic materials.

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


2020 ◽  
Author(s):  
Roshan Kumar Patel ◽  
Shobha Gondh ◽  
Harish Kumar ◽  
Shuchi Shyam Chitrakar ◽  
A. K. Pramanik

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.


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