High-efficiency 2D nanosheet exfoliation by a solid suspension-improving method

2022 ◽  
Author(s):  
Xuewen Zheng ◽  
Haifeng Cong ◽  
Ting Yang ◽  
Kemeng Ji ◽  
Chengyang Wang ◽  
...  

Abstract Two-dimensional (2D) materials with mono or few layers have wide application prospects, including electronic, optoelectronic, and interface functional coatings in addition to energy conversion and storage applications. However, the exfoliation of such materials is still challenging due to their low yield, high cost, and poor ecological safety in preparation. Herein, a safe and efficient solid suspension-improving method was proposed to exfoliate hexagonal boron nitride nanosheets (hBNNSs) in a large yield. The method entails adding a permeation barrier layer in the solvothermal kettle, thus prolonging the contact time between the solvent and hexagonal boron nitride (hBN) nanosheetand improving the stripping efficiency without the need for mechanical agitation. In addition, the proposed method selectively utilizes a matching solvent that can reduce the stripping energy of the material and employs a high-temperature steam shearing process. Compared with other methods, the exfoliating yield of hBNNSs is up to 42.3% at 150°C for 12 h, and the strategy is applicable to other 2D materials. In application, the ionic conductivity of a PEO/hBNNSs composite electrolytes reached 2.18×10−4 S cm−1 at 60°C. Overall, a versatile and effective method for stripping 2D materials in addition to a new safe energy management strategy were provided.

2020 ◽  
Vol 116 (14) ◽  
pp. 142102 ◽  
Author(s):  
A. Maity ◽  
S. J. Grenadier ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang

2020 ◽  
Vol 8 (29) ◽  
pp. 14384-14399 ◽  
Author(s):  
Rui Han ◽  
Feng Liu ◽  
Xuefei Wang ◽  
Minghong Huang ◽  
Wenxian Li ◽  
...  

This review highlights recent research advances in functionalised hexagonal boron nitride for energy conversion and storage applications.


2016 ◽  
Vol 7 (22) ◽  
pp. 4695-4700 ◽  
Author(s):  
Benoit Grosjean ◽  
Clarisse Pean ◽  
Alessandro Siria ◽  
Lydéric Bocquet ◽  
Rodolphe Vuilleumier ◽  
...  

2020 ◽  
Vol 10 (5) ◽  
pp. 1248-1255 ◽  
Author(s):  
Lei Wang ◽  
Yang Wang ◽  
Chang-Wu Zhang ◽  
Jing Wen ◽  
Xuefei Weng ◽  
...  

Here, we report a great promotion in platinum utilization efficiency and catalytic performance for the dehydrogenation of propane using a hexagonal boron nitride nanosheet-supported Pt/Cu cluster catalyst.


Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 785-791
Author(s):  
Momoko Onodera ◽  
Miyako Isayama ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Satoru Masubuchi ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (32) ◽  
pp. 15205-15212 ◽  
Author(s):  
Hamin Park ◽  
Gwang Hyuk Shin ◽  
Khang June Lee ◽  
Sung-Yool Choi

We propose the atomic-scale etching of h-BN achieving an etching rate less than 1 nm min−1 for device integration based on 2D materials.


Nano Letters ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 735-740 ◽  
Author(s):  
Momoko Onodera ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Miyako Isayama ◽  
Satoru Masubuchi ◽  
...  

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Kenji Watanabe ◽  
Takashi Taniguchi

Abstract Hexagonal-boron-nitride single crystals grown by high-pressure, high-temperature (HPHT) synthesis are commonly used as the insulated substrate dielectric for two-dimensional (2D) atomic-layered materials like graphene and transition metal dichalcogenides (TMDs) to improve the flatness of the 2D materials atomically without disturbing the 2D electronic characteristics. However, HPHT single crystals often contain impure regions, which can hold subtle clues in regard to the 2D atomic-layered materials for new discoveries in the physics of 2D materials. To identify the position of the impure domains and to avoid them when the 2D devices are prepared, a far-ultraviolet photoluminescence microscope was developed. This microscope makes it possible to visualize the impure-growth region with ease in a no-contact and non-destructive manner.


2020 ◽  
Vol 6 (10) ◽  
pp. eaay4958 ◽  
Author(s):  
Hyo Ju Park ◽  
Janghwan Cha ◽  
Min Choi ◽  
Jung Hwa Kim ◽  
Roland Yingjie Tay ◽  
...  

Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA′/AB stacking boundaries in chemical vapor deposition–synthesized few-layer hBN. We find that the twin boundary is composed of a 6′6′ configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA′/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA′/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices.


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