Study of GeSn (0.524 eV) Single-Junction Thermophotovoltaic Cells Based on Device Transport Model

2021 ◽  
Author(s):  
Xin-Miao Zhu ◽  
Min Cui ◽  
Yu Wang ◽  
Tian-Jing Yu ◽  
Jin-Xiang Deng ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Transport Model ◽  
Material Consumption ◽  
Inverted Structure ◽  
Single Junction ◽  
Device Model ◽  
Experimental Parameters ◽  
Comparable Performance ◽  
Conversion Performance ◽  
Gesn Alloy

Abstract Based on the transport equation of the semiconductor device model for 0.524 eV GeSn alloy and the experimental parameters of the material, thermal-electricity conversion performance governed by GeSn diode has been systematically studied in its normal and inverted structure. For the normal p+/n (n+/p) structure, it is demonstrated here that an optimal base doping N d(a) = 3 (7)×1018 cm-3 is observed, and the superior p+/n structure can reach the higher performance. To reduce material consumption, an economical active layer can be comprised of 100-300 nm emitter and 3-6 μm base to attain comparable performance as that for the optimal configuration. The results can offer many useful guidelines for the fabrication of economical GeSn thermophotovoltaic devices.

scholarly journals Determining the features of oscillations in prestressed pipelines

2021 ◽  
Vol 6 (7 (114)) ◽  
Author(s):  
Ulanbator Suleimenov ◽  
Nurlan Zhangabay ◽  
Akmaral Utelbayeva ◽  
Mohamad Nasir Mohamad Ibrahim ◽  
Arman Moldagaliyev ◽  
...  
Keyword(s):  
Operating Conditions ◽  
Material Consumption ◽  
Dynamic Stresses ◽  
Study Results ◽  
Experimental Parameters ◽  
Winding Wire ◽  
Pipeline Wall ◽  
Pipeline Model ◽  
Oscillation Decrement ◽  
Stress Parameters

This paper considers the structural solution for a main above-ground pipeline with a pre-stressed winding, which makes it possible to improve the efficiency of operation and reduce material consumption. The results from studying experimentally the features in the operation of prestressed pipelines under static operating loads are given. It is shown that the radial movements of the wall of a pre-stressed pipeline are constrained by the strained winding, which prevents its deformation. It was revealed that increasing the tension force of the winding wire reduces circular stresses in the pipeline wall by 1.3...1.6 times and increases meridional ones by 1.2...1.4 times. The experimental study into the models of prestressed pipelines with free vertical and horizontal oscillations has established the dependence of frequency characteristics on the operating conditions and pre-stress parameters. It was found that the envelope amplitude on the oscillogram of free attenuated oscillations takes the shape of an exponent, which indicates the damping effect of the pre-stress. Analysis of the change in the dynamic characteristics of the models depending on the pre-stress force has revealed that the frequencies of free oscillations increase by 1.5÷1.6 times while the oscillation decrement decreases by 1.2÷1.25 times. This paper reports the results of studying the influence of pre-stress parameters on the stressed-strained state of the pipeline model under forced horizontal and vertical oscillations. It is shown that the diagrams of circular dynamic stresses and deformations in the models of a prestressed pipeline are smoother compared to similar characteristics of a conventional pipeline tested at the same experimental parameters. The study results have made it possible to quantify the features in the operation of a pre-stressed pipeline under static and dynamic influences, taking into consideration the pre-stress parameters and operating conditions.

scholarly journals Hydrodynamic Device Modeling with Band Nonparabolicity

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 181-183
Author(s):  
J. Cai ◽  
H. L. Cui ◽  
E. H. Lenzing ◽  
R. Pastore ◽  
D. L. Rhodes ◽  
...  
Keyword(s):  
Loss Rate ◽  
Semiconductor Device ◽  
Relaxation Rates ◽  
Balance Equations ◽  
Full Account ◽  
One Dimensional ◽  
Device Model ◽  
Carrier Interaction ◽  
Band Nonparabolicity ◽  
Dynamical Screening

A semiconductor device model based on a set of quantum mechanically derived hydrodynamic balance equations are presented. This model takes full account of band nonparabolicity, in addition to its other useful features such as the explicit evaluation of momentum and energy relaxation rates, in the form of frictional force and energy loss rate, within the model, and inclusion of carrier-carrier interaction effects, such as dynamical screening. Numerical results of one-dimensional device simulations are presented and compared with parabolic approximations.

A simple transport model for submicron semiconductor device analysis

1996 ◽  
Vol 80 (5) ◽  
pp. 2904-2907 ◽  
Author(s):  
J. O. Bark ◽  
G. Gildenblat
Keyword(s):  
Semiconductor Device ◽  
Transport Model

A STREAMLINE-UPWINDING/PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL

1995 ◽  
Vol 05 (05) ◽  
pp. 659-681 ◽  
Author(s):  
XUNLEI JIANG
Keyword(s):  
Hydrodynamic Model ◽  
Transonic Flow ◽  
Numerical Experiments ◽  
Semiconductor Device ◽  
Time Dependent ◽  
Two Dimensional ◽  
Galerkin Finite Element ◽  
Finite Element Approach ◽  
Device Model ◽  
Element Approach

It is well known that the hydrodynamic model of the semiconductor device equations may have solutions with discontinuities or shocks. To solve such problems numerically, a non-symmetric streamline-upwinding/Petrov-Galerkin finite element approach is presented for the simulation of the two-dimensional, time-dependent hydrodynamic model. For the silicon diode, numerical experiments are carried out for both subsonic and transonic electron flows. Shocks of the transonic flow are captured.

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