High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transmission Lines ◽  
High Power ◽  
High Speed ◽  
Signal Transmission ◽  
Mesa Structure ◽  
Microwave Characterization ◽  
Absorbing Layer ◽  
Analog Transmission

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

scholarly journals Мощные высокоскоростные фотодиоды Шоттки для аналоговых волоконно-оптических линий передачи СВЧ-сигналов

2019 ◽  
Vol 45 (14) ◽  
pp. 52
Author(s):  
А.Л. Чиж ◽  
К.Б. Микитчук ◽  
К.С. Журавлев ◽  
Д.В. Дмитриев ◽  
А.И. Торопов ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transmission Lines ◽  
High Power ◽  
Fiber Optic ◽  
Signal Transmission ◽  
Design And Technology ◽  
Optical Techniques ◽  
Radar Systems ◽  
Micron Diameter ◽  
Operation Frequency

The design and technology of manufacturing of high-power Schottky barrier UHF-photodiodes with microstrip contacts made on the basis of InAlAs/InGaAs heterostructures have been developed. The operation frequency of 15-micron diameter photodiodes is greater than 25 GHz, while the maximum attainable output UHF power exceeds 50 mW at a frequency of 20 GHz. This allows one to utilize these photodiodes in analog fiber-optic UHF signal transmission lines as well as for generation and processing of UHF signals by optical techniques in radar systems and UHF measurement and instrumentation.

High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

2019 ◽  
Vol 45 (7) ◽  
pp. 739-741 ◽  
Author(s):  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
K. S. Zhuravlev ◽  
D. V. Dmitriev ◽  
A. I. Toropov ◽  
...  
Keyword(s):  
Transmission Lines ◽  
High Power ◽  
High Speed ◽  
Fiber Optic ◽  
Signal Transmission ◽  
Microwave Signal

scholarly journals The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation

Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3399 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
June-Yan Chen ◽  
Jian-Nan Lin ◽  
Chi-Jen Teng ◽  
...  
Keyword(s):  
Electric Fields ◽  
High Speed ◽  
Gain Bandwidth ◽  
Mesa Structure ◽  
Multiplication Gain ◽  
Data Rates ◽  
Field Control ◽  
Side Walls ◽  
Speed Response

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading, field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa-structure for high speed response. The electric fields in the InAlAs-multiplication layer and InGaAs-absorption layer enable high multiplication gain and high-speed response thanks to the thickness and concentration of the field-control and multiplication layers. A mesa active region of 45 micrometers was defined using a bromine-based isotropic wet etching solution. The side walls of the mesa were subjected to sulfur treatment before being coated with a thick polyimide layer to reduce current leakage, while lowering capacitance and increasing response speeds. The breakdown voltage (VBR) of the proposed SAGFM APDs was approximately 32 V. Under reverse bias of 0.9 VBR at room temperature, the proposed device achieved dark current of 31.4 nA, capacitance of 0.19 pF and multiplication gain of 9.8. The 3-dB frequency response was 8.97 GHz and the gain-bandwidth product was 88 GHz. A rise time of 42.0 ps was derived from eye-diagrams at 0.9 VBR. There was notable absence of intersymbol-interference and the signals remained error-free at data-rates of up to 12.5 Gbps.

Self-Calibrated Microwave Characterization of High-Speed Optoelectronic Devices by Heterodyne Spectrum Mapping

2017 ◽  
Vol 35 (10) ◽  
pp. 1952-1961 ◽  
Author(s):  
Shangjian Zhang ◽  
Chong Zhang ◽  
Heng Wang ◽  
Xinhai Zou ◽  
Yali Zhang ◽  
...  
Keyword(s):  
High Speed ◽  
Optoelectronic Devices ◽  
Microwave Characterization

Signal Integrity Analysis of High-Speed Signal Connector USB3.0

2013 ◽  
Vol 760-762 ◽  
pp. 320-324
Author(s):  
Shi Lei Zhou ◽  
Ya Lin Guan ◽  
Xin Kun Tang
Keyword(s):  
Transmission Lines ◽  
High Speed ◽  
Signal Integrity ◽  
Signal Transmission ◽  
Simulation Software ◽  
Key Factor ◽  
Transmission Quality ◽  
Integrity Analysis ◽  
Relationship Of ◽  
The Relationship

High-speed signal connector has become a key factor of the signal transmission quality in telecommunications and data communications system. Signal integrity of connector is an inevitable problem. This paper based on the theory of differential transmission lines and Multimode S-Parameters, analyzed the USB3.0 connector signal integrity. And use 3D simulation software CST to build model and analyze the relationship of signal integrity and connectors geometry.

A Novel Approach to the Measurement and Characterization of Losses due to Surface Roughness in High Speed Transmission Lines

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000241-000245
Author(s):  
Femi Akinwale ◽  
A. Ege Engin
Keyword(s):  
Surface Roughness ◽  
Transmission Lines ◽  
High Speed ◽  
Data Transfer ◽  
Signal Propagation ◽  
High Frequencies ◽  
Novel Approach ◽  
Critical Issues ◽  
5 Ghz

An accurate measurement technique is required to fully characterize the losses observed at high frequencies in transmission lines. Evaluation of losses seen at high frequencies is necessary to meet the high-speed data transfer rates that future applications will demand. Conductor properties and losses are two critical issues in signal path characterization. The nature of conductor losses is not well understood at high speeds. Classical models used for predicting the effects of surface roughness on signal propagation are known to breakdown around 5 GHz. Novel methods are sought to quantify the effects beyond 5 GHz. In this paper, a simple methodology to extract conductor loss is derived and validated based on a stripline configuration of two different widths. The proposed methodology is applicable to surface roughness loss characterization of both organic and ceramic packaging materials.

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