Selective oxidation of AlGaAs aperture layers of a Vertical-cavity surface-emitting laser with a generation wavelength of 850 nm

Abstract A study of the technology of selective oxidation of the buried AlGaAs layer used as an aperture layer in the structure of a Vertical-cavity surface-emitting laser has been carried out. Oxidation process was made as thermal oxidating in a humidified nitrogen atmosphere. The conditions of the oxidation process are described, images of the oxidation results and the dependence of the growth rate of the oxidized layer on the process temperature are presented. A technology for the formation of an oxide current aperture has been developed for vertical cavity surface emitting lasers with a generation wavelength of 850 nm, which makes it possible to accurately control the size and shape of the resulting aperture.

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SURFACE EMITTING LASERS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156492000102 ◽

1992 ◽

Vol 03 (03n04) ◽

pp. 263-277 ◽

Cited By ~ 3

Author(s):

KENICHI IGA

Keyword(s):

Cavity Surface ◽

Photonic Integration ◽

Parallel Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Technical Issues ◽

Basic Technology ◽

Emitting Lasers ◽

Vertical Cavity

In this paper we review the progress and basic technology of vertical cavity surface emitting lasers together with related parallel surface operating optical devices. First, the concept of a vertical cavity surface emitting laser is presented, and then currently developed devices and their performances will be introduced. We will then feature some technical issues, such as multilayer structures, 2-dimensional arrays, photonic integration, etc. Lastly, future prospects for parallel lightwave subsystems using surface emitting lasers will be discussed.

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Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation

Electronics Letters ◽

10.1049/el:19950610 ◽

1995 ◽

Vol 31 (11) ◽

pp. 886-888 ◽

Cited By ~ 228

Author(s):

G.M. Yang ◽

M.H. MacDougal ◽

P.D. Dapkus

Keyword(s):

Selective Oxidation ◽

Threshold Current ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

MRS Proceedings ◽

10.1557/proc-421-63 ◽

1996 ◽

Vol 421 ◽

Cited By ~ 1

Author(s):

D.I. Babic ◽

V. Jayaraman ◽

N. M. Margalit ◽

K. Streubel ◽

M.E. Heimbuch ◽

...

Keyword(s):

Continuous Wave ◽

Active Regions ◽

Cavity Surface ◽

Long Wavelength ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Emitting Lasers ◽

Vertical Cavity ◽

Lattice Matched

AbstractLong-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

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Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers

MRS Bulletin ◽

10.1557/mrs2002.170 ◽

2002 ◽

Vol 27 (7) ◽

pp. 520-524 ◽

Cited By ~ 8

Author(s):

W.G. Breiland ◽

A.A. Allerman ◽

J.F. Klem ◽

K.E. Waldrip

Keyword(s):

Materials Science ◽

Laser Cavity ◽

Cavity Surface ◽

Bragg Reflectors ◽

Distributed Bragg Reflectors ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Emitting Lasers ◽

Vertical Cavity

AbstractDistributed Bragg reflectors (DBRs) not only serve as high-reflectance mirrors to define the laser cavity of a vertical-cavity surface-emitting laser (VCSEL), but they also must conduct electricity, confine currents, and provide a single-crystal template for the gain region of the laser. Basic optical and electrical properties of DBRs are presented in this article. Three examples of DBR structures used in VCSEL applications from the ultraviolet to the infrared are given to illustrate the complexity and range of materials science issues that are encountered in DBR growth. Fabrication issues are also discussed.

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Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.3883 ◽

1991 ◽

Vol 30 (Part 1, No. 12B) ◽

pp. 3883-3886 ◽

Cited By ~ 4

Author(s):

Y. H. Wang ◽

G. Hasnain ◽

K. Tai ◽

J. D. Wynn ◽

B. E. Weir ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Emitting Lasers ◽

Vertical Cavity ◽

Integrated Structures

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PHYSICS OF SEMICONDUCTOR VERTICAL-CAVITY SURFACE-EMITTING LASERS

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s0218863595000070 ◽

1995 ◽

Vol 04 (01) ◽

pp. 141-161 ◽

Cited By ~ 2

Author(s):

R. JIN ◽

G. KHITROVA ◽

D. BOGGAVARAPU ◽

H. M. GIBBS ◽

S. W. KOCH ◽

...

Keyword(s):

Optical Injection ◽

Cavity Surface ◽

Many Body ◽

Laser Theory ◽

Many Body Theory ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Emitting Lasers ◽

Vertical Cavity

We describe recent progress in the physics of light-matter interactions in vertical-cavity surface-emitting-laser (VCSEL) structures. Enhanced spontaneous emission indicates strong medium-cavity coupling. The linewidth broadening factor is more accurately determined in VCSELs, supporting many-body theory of semiconductor nonlinearities. Threshold behavior of VCSELs and microlasers is investigated by photon-correlation experiment and quantum laser theory with emphasis on the importance of second-order coherence properties. External optical injection into a VCSEL cavity leads to injection locking, instabilities, acceleration of coherent energy transfer and sideband lasing, most of which are modeled successfully by recently-developed first-principles semiconductor laser theory.

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MID-IR Vertical Cavity Surface-Emitting Lasers

MRS Proceedings ◽

10.1557/proc-484-95 ◽

1997 ◽

Vol 484 ◽

Author(s):

I. Vurgaftman ◽

W. W. Bewley ◽

C. L. Felix ◽

E. H. Aifer ◽

J. R. Meyer ◽

...

Keyword(s):

Quantum Wells ◽

Cavity Surface ◽

Type Ii ◽

Optically Pumped ◽

Pulsed Mode ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Emitting Lasers ◽

Vertical Cavity

AbstractAn optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a “W” configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 ym has a weak temperature variation (dλ/dT ≈ 0.07 – 0.09 nm/K), and the multimode linewidth is quite narrow (2.5–4 nm). Lasing is observed up to T = 280 K in pulsed mode and up to 160 K cw. Under cw excitation at T = 78 K, the threshold pump power is as low as 4 mW for a 6 am spot, and the differential power conversion efficiency is 4.5%.

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