scholarly journals Optimization of deep silicon etching process for microstructures fabrication

2021 ◽  
Vol 2086 (1) ◽  
pp. 012190
Author(s):  
V Kuzmenko ◽  
A Miakonkikh ◽  
K Rudenko
Keyword(s):  
Bias Voltage ◽  
Etch Rate ◽  
Etching Process ◽  
Cyclic Process ◽  
Wall Roughness ◽  
Silicon Etching ◽  
Etching Depth ◽  
Deep Etching ◽  
Anisotropic Silicon Etching

Abstract The paper presents the study of cyclic process of deep anisotropic silicon etching, called Oxi-Etch, in which the steps of etching and oxidation alternate, allowing deep etching of silicon with an anisotropic profile. This process forms typical for cyclic etching process sidewall profile called scalloping. Opportunities for modification and optimization of the process for specific application were investigated. The effects of optimization of the bias voltage and the duration of the etching step on the parameters of the resulting structures, such as the etching depth, wall roughness, and the accuracy of transferring the lithographic size, are considered. Balance between etch rate and scalloping was established.

Feasibility to Fabricate the 45° Slant with Anisotropic Silicon Etching in NaOH Solution

2012 ◽  
Vol 503-504 ◽  
pp. 615-619 ◽  
Author(s):  
Alonggot Limcharoen ◽  
Chupong Pakpum ◽  
Pichet Limsuwan
Keyword(s):  
Data Storage ◽  
Etch Rate ◽  
Silicon Etching ◽  
Naoh Solution ◽  
Conventional Photolithography ◽  
Sio2 Mask ◽  
P Type ◽  
Anisotropic Silicon Etching ◽  
Wet Etch ◽  
Laser Light Source

The experiments to study the feasibility to fabricate the 45 slant on p-type (100)-oriented silicon wafer were done. The various mask shapes, rectangular, cross, circle and boomerang, were patterned on the SiO2 mask by utilizing the conventional photolithography and dry etching process for investigating the anisotropic wet etch characteristic. The edge of masks were align in two crystal direction, 110 and 100 that is allowable to get a better understanding about the crystal orientation and the angle between planes in a crystal system. The very low etch rate,  50 nm/min, process regime was selected to fabricate the 45 slant with the concept is the lowest of an overall etch rate in the system to reach the level that is possible to detect the (110) plane. The etch recipe can be used for the next development work to built a housing of the laser light source for applying in a data storage technology.

Wet Etching Technique to Reduce Pyramidal Hillocks for Anisotropic Silicon Etching in NaOH/IPA Solution

2015 ◽  
Vol 659 ◽  
pp. 681-685
Author(s):  
Chu Pong Pakpum
Keyword(s):  
Etch Rate ◽  
Wet Etching ◽  
High Yield ◽  
Solution Temperature ◽  
Silicon Etching ◽  
Etching Technique ◽  
Ultrasonic Agitation ◽  
The Difference ◽  
Etched Surface ◽  
Anisotropic Silicon Etching

The various methods of silicon wet etching techniques, which utilize ultrasonic agitation to reduce pyramidal hillocks in etched patterns, were evaluated in NaOH+IPA solution. The comparison of the etching methods composed of; 1.) no agitation + sample horizontally orientated, 2.) ultrasonic agitation + sample horizontally orientated, 3.) ultrasonic agitation + sample vertically orientated, and 4.) ultrasonic with rotation agitation + sample vertically orientated. It was found that the percentages of the etched patterns presenting hillocks after etching were 100%, 79.77%, 32.67% and 2.62%, respectively. Ultrasonic coupled with rotation agitation along with the sample vertically orientated is the most powerful etching technique, offering a high yield of smooth etched surface. The difference in etch rate between without agitation and applying ultrasonic agitation was not observed in this experiment, as it was operated in a solution temperature 60-65°C and a 275nm/min etch rate was achieved. The theories that relate to each evaluated method are also discussed.

ИССЛЕДОВАНИЕ ПРОЦЕССА ГЛУБОКОГО ТРАВЛЕНИЯ КРЕМНИЯ С МИНИМАЛЬНОЙ ШЕРОХОВАТОСТЬЮ СТЕНОК И ДНА СТРУКТУР

2020 ◽  
Vol 96 (3s) ◽  
pp. 668-675
Author(s):  
Я.А. Мирошкин
Keyword(s):  
Analytical Model ◽  
Phenomenological Description ◽  
Silicon Etching ◽  
Anisotropic Silicon Etching

Данная работа посвящена исследованию процессов глубокого анизотропного травления кремния. В качестве предложенных методов были проанализированы два подхода - Bosch и Cryo. Представлено феноменологическое описание вышеупомянутых методов, проведен анализ эксперимента по криогенному травлению кремния, полученный на базе ФТИАН, также предложена аналитическая модель Cryo-процесса. This work is devoted to the study of the processes of deep anisotropic silicon etching. Two approaches (Bosch and Cryo) have been analyzed as proposed methods. The phenomenological description of the above mentioned methods has been presented, the analysis of the experiment on cryogenic etching of silicon obtained on the basis of FTIAN has been carried out, as well as an analytical model of Cryo process has been proposed.

High-Rate Anisotropic Silicon Etching with the Expanding Thermal Plasma Technique

2019 ◽  
Vol 3 (10) ◽  
pp. 291-298 ◽  
Author(s):  
Michiel A. Blauw ◽  
Peter Van Lankvelt ◽  
F. Roozeboom ◽  
Erwin Kessels ◽  
Richard van de Sanden
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Silicon Etching ◽  
Plasma Technique ◽  
Anisotropic Silicon Etching

Ultra-Fast Anisotropic Silicon Etching with Resulting Mirror Surfaces in Ammonia Solutions

2001 ◽  
pp. 608-611 ◽  
Author(s):  
Christophe Mihalcea ◽  
Sommawan Khumpuang ◽  
Masashi Kuwahara ◽  
Zhen Yang ◽  
Ryutaro Maeda ◽  
...  
Keyword(s):  
Silicon Etching ◽  
Anisotropic Silicon Etching

Correlation Between The Mechanical Stress And Microstructure In Reactive Bias Magnetron Sputtered Silicon Nitride Films

1997 ◽  
Vol 505 ◽  
Author(s):  
Joo Han Kim ◽  
Won Sang Lee ◽  
Ki Woong Chunga
Keyword(s):  
Silicon Nitride ◽  
Mechanical Stress ◽  
Bias Voltage ◽  
Etch Rate ◽  
Rutherford Backscattering Spectrometry ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Silicon Nitride Films ◽  
Transmission Electron ◽  
Bombardment Energy

ABSTRACTThe influence of ion bombardment on the mechanical stress and microstructure of sputtered silicon nitride (SiNx) films has been systematically investigated. Applied substrate bias voltage was used to control the bombardment energy in a radio frequency (rf) reactive magnetron sputtering system. The resultant films were characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR), Rutherford backscattering spectrometry (RBS), stress and chemical etch rate measurements. As the bias voltage was increased, the internal stress in SiNx films became increasingly compressive and reached a value of about 18.3 × 109 dyne/cm2 at higher bias voltages. These correlated well with the transition of the film microstructure from a porous microcolumnar structure containing large void to the more densely packed one. The obtained results can be explained in terms of atomic peening by energetic particles, leading to densification of the microstructure. It was also found that the amount of argon incorporated in the film is increased with increasing bias voltage, whereas the oxygen content is decreased. The lowest etch rate in buffered HF solution, approximately 1.2 Å/sec, was observed with the application of a substrate bias of -50 V.

scholarly journals Plasma chemical silicon etching process*

2016 ◽  
Vol 122 ◽  
pp. 012028
Author(s):  
K V Rudenko ◽  
A V Miakonkih ◽  
A E Rogojin ◽  
S V Bogdanov ◽  
V G Sidorov ◽  
...  
Keyword(s):  
Etching Process ◽  
Silicon Etching ◽  
Plasma Chemical

Plasma-Reactor Wall Interactions: Bromine-Fluorine Chemistry Duality in an Industrial Dry Etch Process

2015 ◽  
Vol 1803 ◽  
Author(s):  
M. Rizquez ◽  
A. Roussy ◽  
B. Bortoloti ◽  
J. Pinaton ◽  
Y. Goasduff
Keyword(s):  
Plasma Reactor ◽  
Industrial Process ◽  
Etching Process ◽  
Reactor Wall ◽  
Silicon Etching ◽  
Fluorine Chemistry ◽  
Starting Point ◽  
Dry Etch ◽  
Over Time ◽  
Wall Interactions

ABSTRACTThe purpose of the present paper is to investigate the composition of the coating formed on the plasma reactor walls after an industrial process which is divided into two steps, where the chemistries used are CF4/CH2F2 followed by HBr/O2. Since Fluorine traces have been detected through the plasma and over the wafer even during the second chemistry, investigations of the Br-F chemistry duality for a new silicon etching process have been performed in order to see the reactions which are taking place inside of the reactor. The understanding of these formations is really important to avoid process instabilities and get better performance of the transistors. The coating on the walls after the process and after the cleaning between wafers has been characterized in order to figure out the level of F traces after each step and to understand the reminiscence of this element over time. This study is the starting point to propose a modification on the Waferless AutoClean (WAC) used nowadays in an industrial process.

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