Numerical simulation of domain wall motion in a surface discharge over a ferroelectric

Abstract The article presents a simplified numerical simulation of a vacuum ferroelectric cathode operating in a low-current mode (without surface plasma formation). The field emission from the cathode was simulated for the range of applied electric field magnitudes. The polarization domain growth process during the charging of ferroelectric surface was simulated using Landau-Ginzburg-Devonshire model. Interaction of the electrons with a depolarization field of a domain wall led to an attraction of the electrons to the polarization domain boundaries. A close to the linear dependence of the equilibrium domain wall position from the applied electric field was found with the total emitted charge proportional to the domain size.

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Development of Lead-Free Piezoelectric Materials Using Domain Wall Engineering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.320.151 ◽

2006 ◽

Vol 320 ◽

pp. 151-154

Author(s):

Satoshi Wada ◽

Koichi Yako ◽

Tomomitsu Muraishi ◽

Hirofumi Kakemoto ◽

Takaaki Tsurumi

Keyword(s):

Barium Titanate ◽

Domain Wall ◽

Electric Field ◽

Single Crystals ◽

Electric Fields ◽

Applied Electric Field ◽

Piezoelectric Materials ◽

Domain Size ◽

Lead Free ◽

Gradient Domain

For the [111] oriented barium titanate (BaTiO3) single crystals, the patterning electrode was applied to induce the finer engineered domain configurations with domain size of 3 2m. The poling treatment was performed at 134 °C under electric fields below 6 kV/cm to inhibit the burning of the patterning electrode with photoresist. As the results, the gradient domain sizes from 3 to 8-9 2m were induced into the 31 resonator. The d31 was measured at -243.2 pC/N, and this value was almost 70 % of the expected d31 of –337.7 pC/N for the resonator with domain size of 3 2m. This difference was originated from lower applied electric field below 6 kV/cm. However, this study was revealed that the patterning electrode was very powerful tool to induce much finer domain sizes below 5 2m.

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Velocity of Sidewise 180° Domain-Wall Motion in BaTiO3as a Function of the Applied Electric Field

Physical Review ◽

10.1103/physrev.112.755 ◽

1958 ◽

Vol 112 (3) ◽

pp. 755-762 ◽

Cited By ~ 104

Author(s):

Robert C. Miller ◽

Albert Savage

Keyword(s):

Domain Wall ◽

Electric Field ◽

Applied Electric Field ◽

Wall Motion ◽

Domain Wall Motion

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Impact of 90°-Domain Wall Motion in Pb(Zr0.43Ti0.57)O3Film on the Ferroelectricity Induced by an Applied Electric Field

Applied Physics Express ◽

10.1143/apex.2.041401 ◽

2009 ◽

Vol 2 ◽

pp. 041401 ◽

Cited By ~ 8

Author(s):

Hitoshi Morioka ◽

Keisuke Saito ◽

Hiroshi Nakaki ◽

Rikyu Ikariyama ◽

Toshiyuki Kurosawa ◽

...

Keyword(s):

Domain Wall ◽

Electric Field ◽

Applied Electric Field ◽

Wall Motion ◽

Domain Wall Motion

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Electric field control of magnetic domain wall motion via modulation of the Dzyaloshinskii-Moriya interaction

Science Advances ◽

10.1126/sciadv.aav0265 ◽

2018 ◽

Vol 4 (12) ◽

pp. eaav0265 ◽

Cited By ~ 14

Author(s):

Tomohiro Koyama ◽

Yoshinobu Nakatani ◽

Jun’ichi Ieda ◽

Daichi Chiba

Keyword(s):

Domain Wall ◽

Electric Field ◽

Magnetic Domain ◽

Domain Wall Motion ◽

Asymmetric Structure ◽

Velocity Change ◽

Spintronic Devices ◽

Electrical Manipulation ◽

Substantial Change ◽

Moriya Interaction

We show that the electric field (EF) can control the domain wall (DW) velocity in a Pt/Co/Pd asymmetric structure. With the application of a gate voltage, a substantial change in DW velocity up to 50 m/s is observed, which is much greater than that observed in previous studies. Moreover, modulation of a DW velocity exceeding 100 m/s is demonstrated in this study. An EF-induced change in the interfacial Dzyaloshinskii-Moriya interaction (DMI) up to several percent is found to be the origin of the velocity modulation. The DMI-mediated velocity change shown here is a fundamentally different mechanism from that caused by EF-induced anisotropy modulation. Our results will pave the way for the electrical manipulation of spin structures and dynamics via DMI control, which can enhance the performance of spintronic devices.

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Electric Field Driven Magnetic Domain Wall Motion in Iron Garnet Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.152-153.143 ◽

2009 ◽

Vol 152-153 ◽

pp. 143-146 ◽

Cited By ~ 5

Author(s):

A. Logginov ◽

G. Meshkov ◽

A. Nikolaev ◽

E. Nikolaeva ◽

A. Pyatakov ◽

...

Keyword(s):

Domain Wall ◽

Electric Field ◽

Wall Motion ◽

Magnetic Domain ◽

Domain Wall Motion ◽

Gadolinium Gallium Garnet ◽

Magnetic Domain Wall ◽

Garnet Films ◽

Dynamic Observation ◽

Iron Garnet

The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 800 kV/cm electric field pulses gave the domain wall velocity in the range 30÷50 m/s. Similar velocity was achieved in magnetic field pulse about 50 Oe.

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