Tunable type-II band alignment and electronic structure of C3N4/MoSi2N4 heterostructure: Interlayer coupling and electric field

2022 ◽  
Vol 105 (4) ◽  
Author(s):  
Cuong Q. Nguyen ◽  
Yee Sin Ang ◽  
Son-Tung Nguyen ◽  
Nguyen V. Hoang ◽  
Nguyen Manh Hung ◽  
...  
2018 ◽  
Vol 6 (38) ◽  
pp. 10256-10262 ◽  
Author(s):  
Wenli Zhang ◽  
Dahu Chang ◽  
Qiang Gao ◽  
Chunyao Niu ◽  
Chong Li ◽  
...  

Applying an external electric field can induce a transition from a type-I to a type-II band alignment in an α-tellurene/MoS2 heterostructure.


2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.


2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  

Author(s):  
Pan Wang ◽  
Yixin Zong ◽  
Hao Liu ◽  
Hongyu Wen ◽  
Yueyang Liu ◽  
...  

The band alignment of type-II ZnO/MoSSe vdWH can be tuned to types I and III by strain and the electric field.


2020 ◽  
Vol 89 (1) ◽  
pp. 10103
Author(s):  
Honglin Li ◽  
Yuting Cui ◽  
Haijun Luo ◽  
Wanjun Li

Efforts to efficiently use of the next generation 2-dimension (2D) structured monolayers is getting a lot of attention for their excellent properties recently. In this work, we composite the blue phosphorus (BP) and monolayer GeX (X = C/H/Se) via van der Waals force (vdW) interaction to obtain well defined type-II band alignment heterostructures. A systematic theoretic study is conducted to explore the interlayer coupling effects and the bands re-alignment of BP-GeX (X = C/H/Se) heterostructure after the strain imposed. To devise usable and efficient materials to degrade pollutant or used as a potential photovoltaic cell material, previous researches have proved that using 2D materials as components is a feasible way to obtain high performance. Here, we prudently present a comprehensive investigation on the BP and GeX (X = C/H/Se) with different twisted angles via first-principles calculation to lay a theoretical framework on the band alignment and carriers' separation. It reveals that the intrinsic electronic properties of BP and GeX are roughly preserved in the corresponding heterostructures. Upon strain applied, band alignment can be flexibly manipulated by varying external imposed strain. The heterostructures can maintain type-II character within a certain strain range, and thus the carriers are spatially separated to different portions. This work not only provides a deep insight into the construction of the heterostructure, but presents a new possibility to search for a flexible and feasible approach to promote its catalytic performance. The corresponding results would provide meaningful guidelines for designing 2D structure based novel materials.


2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.


2016 ◽  
Vol 18 (23) ◽  
pp. 15632-15638 ◽  
Author(s):  
Wei Wei ◽  
Ying Dai ◽  
Baibiao Huang

Two-dimensional TMD in-plane heterostructures demonstrate true type-II band alignment and the built-in electric field makes the defect states consecutive.


2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Gang Xu ◽  
Hao Lei

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.


2021 ◽  
Vol 542 ◽  
pp. 148505
Author(s):  
Xue Ting Zhu ◽  
Ying Xu ◽  
Yong Cao ◽  
Yu Qing Zhao ◽  
Wei Sheng ◽  
...  

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