Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): A high-resolution angle-resolved inverse photoemission study

1985 ◽  
Vol 32 (8) ◽  
pp. 5237-5244 ◽  
Author(s):  
D. Straub ◽  
M. Skibowski ◽  
F. J. Himpsel
Keyword(s):  
High Resolution ◽  
Conduction Band ◽  
Critical Points ◽  
Surface States ◽  
Inverse Photoemission ◽  
Band Dispersion ◽  
Photoemission Study

scholarly journals Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

2004 ◽  
Vol 241 (10) ◽  
pp. 2246-2252 ◽  
Author(s):  
S. Sayan ◽  
R. A. Bartynski ◽  
X. Zhao ◽  
E. P. Gusev ◽  
D. Vanderbilt ◽  
...  
Keyword(s):  
Conduction Band ◽  
Gate Stack ◽  
Band Offsets ◽  
Inverse Photoemission ◽  
Photoemission Study

High-resolution photoemission study of the surface states near gG on Cu(111) and Ag(111)

1995 ◽  
Vol 331-333 ◽  
pp. 1233-1237 ◽  
Author(s):  
R. Paniago ◽  
R. Matzdorf ◽  
G. Meister ◽  
A. Goldmann
Keyword(s):  
High Resolution ◽  
Surface States ◽  
Photoemission Study

scholarly journals Conduction band satellite of Ni metal observed using 3p-3d resonant inverse photoemission study

2004 ◽  
Vol 70 (19) ◽  
Author(s):  
Y. Tezuka ◽  
K. Kanai ◽  
H. Ishii ◽  
S. Shin ◽  
S. Nozawa ◽  
...  
Keyword(s):  
Conduction Band ◽  
Inverse Photoemission ◽  
Photoemission Study

VALENCE-BAND PHOTOEMISSION STUDY OF (Ba, Cs) on W(110)

1997 ◽  
Vol 04 (06) ◽  
pp. 1197-1201 ◽  
Author(s):  
TUN-WEN PI ◽  
LE-HONG HONG ◽  
RONG-TZONG WU ◽  
CHIU-PING CHENG
Keyword(s):  
Work Function ◽  
Valence Band ◽  
High Surface ◽  
Surface States ◽  
Metal Substrate ◽  
Inverse Photoemission ◽  
Interfacial Electronic Structure ◽  
Band Spectra ◽  
Photoemission Study ◽  
Tungsten Substrate

We present the first valence-band photoemission study of Ba and Cs on an atomically clean W(110) surface. The cleanness of the tungsten substrate can be justified from both high surface 4f core emission and sharp surface states in the valence-band spectra. Upon Ba (Cs) adsorption, the work function is lowered to 2.02 (1.76) eV, corresponding to one third of a monolayer. Further, the two symmetric high-lying surface states move little in energy but quench rapidly in intensity and diminish at the work-function minimum. On the other hand, the low-lying surface state at 1.41 eV shifts about 215 meV toward higher binding energy and reduces its emission at thicker coverage. The bonding of the Ba d orbital with the W d-like surface states is not found, in contrast to the theoretical calculation and angle-resolved inverse photoemission study of Ba on W(100) . From the coverage-dependent interfacial electronic structure and the parallel behaviors manifest in both Ba on W and Cs on W , the polarized-covalent model for the alkali-metal–substrate interactions is firmly reinforced.

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