Exciton localization inInxGa1−xAs/GaAs quantum wells observed by temperature-modulated photoluminescence

1991 ◽  
Vol 43 (2) ◽  
pp. 1546-1550 ◽  
Author(s):  
M. Gal ◽  
Z. Y. Xu ◽  
F. Green ◽  
B. F. Usher
Keyword(s):  
Quantum Wells ◽  
Exciton Localization

Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells

1997 ◽  
Vol 55 (8) ◽  
pp. 5253-5258 ◽  
Author(s):  
R. Grousson ◽  
V. Voliotis ◽  
N. Grandjean ◽  
J. Massies ◽  
M. Leroux ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Exciton Localization

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Exciton localization in group-III nitride quantum wells

1999 ◽  
Vol 59 (15) ◽  
pp. 9783-9786 ◽  
Author(s):  
V. I. Litvinov ◽  
M. Razeghi
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Exciton Localization ◽  
Group Iii Nitride

scholarly journals Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells

2000 ◽  
Vol 61 (15) ◽  
pp. 10322-10329 ◽  
Author(s):  
K. Leosson ◽  
J. R. Jensen ◽  
W. Langbein ◽  
J. M. Hvam
Keyword(s):  
Quantum Wells ◽  
Interface Roughness ◽  
Exciton Localization

Exciton localization and quantum efficiency—A comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells

2003 ◽  
Vol 93 (2) ◽  
pp. 1048-1053 ◽  
Author(s):  
U. Jahn ◽  
S. Dhar ◽  
O. Brandt ◽  
H. T. Grahn ◽  
K. H. Ploog ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Exciton Localization ◽  
Cathodoluminescence Study

Optical investigations and exciton localization in high quality Zn1−xMgxO–ZnO single quantum wells

2007 ◽  
Vol 91 (8) ◽  
pp. 081911 ◽  
Author(s):  
M. Al-Suleiman ◽  
A. El-Shaer ◽  
A. Bakin ◽  
H.-H. Wehmann ◽  
A. Waag
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality ◽  
Exciton Localization

Exciton localization in submonolayer InAs/GaAs multiple quantum wells

1990 ◽  
Vol 42 (5) ◽  
pp. 3209-3212 ◽  
Author(s):  
R. Cingolani ◽  
O. Brandt ◽  
L. Tapfer ◽  
G. Scamarcio ◽  
G. C. La Rocca ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Exciton Localization
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