Effect of Primary-Electron Diffusion on Secondary-Electron Emission

1972 ◽  
Vol 5 (11) ◽  
pp. 4309-4324 ◽  
Author(s):  
Alan J. Bennett ◽  
Laura M. Roth
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Electron ◽  
Electron Diffusion

scholarly journals SECONDARY ELECTRON EMISSION FROM THIN ALUMINIUM FOILS PRODUCED BY HIGH ENERGY ELECTRON BEAMS

2021 ◽  
pp. 38-41
Author(s):  
S.H. Karpus ◽  
G.D. Kovalenko ◽  
Yu.H. Kazarinov ◽  
V.M. Dubina ◽  
V.Y. Kasilov ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electron Beam ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
High Energy ◽  
Secondary Emission ◽  
Primary Electron ◽  
Primary Electron Beam ◽  
Thin Foils

The description of the experimental equipment and technique for measuring the secondary emission of elec-trons (SEE) with application of accelerated electrons at the linear accelerator of the IHEPNP NSC KIPT with ener-gies up to 30 MeV and a standard secondary emission monitor [1] are presented. Experimental data of secondary electron emission yields from thin aluminum targets (8 and 50 μm) for primary electron beam energies of 16 and 25 MeV have been experimentally measured. The analysis of the experimental data and their comparison with the theory are carried out. It is shown that the proposed technique for measuring the yields of secondary electron emis-sion is useful and applied for study of low-energy and δ-electrons yields from thin foils, as well as to research the effect of the density effect depending on the energy of the primary electron beam.

AES Investigation of Inhomogenous Metal-Insulator Samples

2005 ◽  
Vol 11 (6) ◽  
pp. 567-571 ◽  
Author(s):  
Gábor Dobos ◽  
György Vida ◽  
Zoltán Tóth ◽  
Katalin Josepovits
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Surface Coverage ◽  
Secondary Electron Emission ◽  
Oxide Thickness ◽  
Primary Electron ◽  
Metal Insulator ◽  
Total Electron ◽  
Emission Yield ◽  
Effect Of Surface

In this article, the secondary electron-emission properties of both vertically and laterally inhomogeneous samples are discussed. To study the effect of surface coverage, the total electron-emission yield of tungsten and niobium samples was measured as a function of primary electron energy and oxide thickness. A method is suggested to avoid charging difficulties during AES measurements of samples that consist of both metal and various insulator parts.

THEORETICAL RESEARCH OF SECONDARY ELECTRON EMISSION FROM NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS

2019 ◽  
Vol 26 (04) ◽  
pp. 1850181 ◽  
Author(s):  
AI-GEN XIE ◽  
YANG YU ◽  
YA-YI CHEN ◽  
YU-QING XIA ◽  
HAO-YU LIU
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Electron ◽  
Theoretical Research ◽  
Negative Electron Affinity ◽  
Secondary Electron Yield ◽  
Electron Yield ◽  
Yield Formula

Based on primary range [Formula: see text], relationships among parameters of secondary electron yield [Formula: see text] and the processes and characteristics of secondary electron emission (SEE) from negative electron affinity (NEA) semiconductors, the universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors were deduced, respectively; where [Formula: see text] is incident energy of primary electron. According to the characteristics of SEE from NEA semiconductors with [Formula: see text], [Formula: see text], deduced universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors and experimental data, special formulas for [Formula: see text] at 0.5[Formula: see text] of several NEA semiconductors with [Formula: see text] were deduced and proved to be true experimentally, respectively; where [Formula: see text] is the [Formula: see text] at which [Formula: see text] reaches maximum secondary electron yield. It can be concluded that the formula for [Formula: see text] of NEA semiconductors with [Formula: see text] was deduced and could be used to calculate [Formula: see text], and that the method of calculating the 1/[Formula: see text] of NEA semiconductors with [Formula: see text] is plausible; where [Formula: see text] is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of emitter, and 1/[Formula: see text] is mean escape depth of secondary electron.

Time evolution of secondary electron emission and trapped charge accumulation in polyimide film under various primary electron irradiation currents

2016 ◽  
Vol 390 ◽  
pp. 346-349 ◽  
Author(s):  
Bai-Peng Song ◽  
Run-Dong Zhou ◽  
Guo-Qiang Su ◽  
Hai-Bao Mu ◽  
Guan-Jun Zhang ◽  
...  
Keyword(s):  
Time Evolution ◽  
Electron Irradiation ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Polyimide Film ◽  
Primary Electron ◽  
Charge Accumulation ◽  
Trapped Charge

Formulae for low-energy secondary electron yield from different kinds of emitters as a function of measurable variables

2017 ◽  
Vol 31 (10) ◽  
pp. 1750105 ◽  
Author(s):  
Ai-Gen Xie ◽  
Kun Zhon ◽  
De-Lin Zhao ◽  
Yu-Qing Xia
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Electron ◽  
Low Energy ◽  
Secondary Electron Yield ◽  
Universal Formula ◽  
Electron Yield ◽  
Energy Formula ◽  
Yield Formula

Based on the characteristics of secondary electron emission and the relationships among parameters of secondary electron yield [Formula: see text] in the low-energy range of [Formula: see text] eV (low-energy [Formula: see text]), the universal formula for low-energy [Formula: see text] as a function of [Formula: see text], [Formula: see text] and maximum [Formula: see text] was deduced, where [Formula: see text] and [Formula: see text] are the incident energies of primary electron and of [Formula: see text], respectively. From the deduced universal formula and experimental low-energy [Formula: see text] from metals, semiconductors and insulators, special formula for low-energy [Formula: see text] from metals as a function of [Formula: see text], [Formula: see text] and [Formula: see text] and that for low-energy [Formula: see text] from semiconductors and insulators as a function of [Formula: see text], [Formula: see text] and [Formula: see text] were deduced, respectively. The results were analyzed, it can be concluded that the two deduced special formulae can be used to calculate low-energy [Formula: see text] from metals, semiconductors and insulators, respectively.

Historical Introduction

1977 ◽  
Vol 35 ◽  
pp. 2-5
Author(s):  
R. D. Heidenreich
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
50Th Anniversary ◽  
Secondary Emission ◽  
Wave Nature ◽  
Nobel Prize In Physics ◽  
Primary Electrons ◽  
The U.S ◽  
Mutual Agreement

This program has been organized by the EMSA to commensurate the 50th anniversary of the experimental verification of the wave nature of the electron. Davisson and Germer in the U.S. and Thomson and Reid in Britian accomplished this at about the same time. Their findings were published in Nature in 1927 by mutual agreement since their independent efforts had led to the same conclusion at about the same time. In 1937 Davisson and Thomson shared the Nobel Prize in physics for demonstrating the wave nature of the electron deduced in 1924 by Louis de Broglie.The Davisson experiments (1921-1927) were concerned with the angular distribution of secondary electron emission from nickel surfaces produced by 150 volt primary electrons. The motivation was the effect of secondary emission on the characteristics of vacuum tubes but significant deviations from the results expected for a corpuscular electron led to a diffraction interpretation suggested by Elasser in 1925.

SEM and Auger microanalysis studies of Cu-Be dynode surfaces at each activation condition

1978 ◽  
Vol 36 (1) ◽  
pp. 524-525
Author(s):  
T. Koshikawa ◽  
Y. Fujii ◽  
E. Sugata ◽  
F. Kanematsu
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Life Time ◽  
Activation Process ◽  
Beam Diameter ◽  
Activation Temperature ◽  
Electron Multiplier ◽  
Activation Condition ◽  
Activation Conditions

The Cu-Be alloys are widely used as the electron multiplier dynodes after the adequate activation process. But the structures and compositions of the elements on the activated surfaces were not studied clearly. The Cu-Be alloys are heated in the oxygen atmosphere in the usual activation techniques. The activation conditions, e.g. temperature and O2 pressure, affect strongly the secondary electron yield and life time of dynodes.In the present paper, the activated Cu-Be dynode surfaces at each condition are investigated with Scanning Auger Microanalyzer (SAM) (primary beam diameter: 3μmϕ) and SEM. The commercial Cu-Be(2%) alloys were polished with Cr2O3 powder, rinsed in the distilled water and set in the vacuum furnance.Two typical activation condition, i.e. activation temperature 730°C and 810°C in 5x10-3 Torr O2 pressure were chosen since the formation mechanism of the BeO film on the Cu-Be alloys was guessed to be very different at each temperature from the results of the secondary electron emission measurements.

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