scholarly journals Ba145 and La145,146 structure from lifetime measurements

2021 ◽  
Vol 104 (3) ◽  
Author(s):  
B. Olaizola ◽  
A. Babu ◽  
R. Umashankar ◽  
A. B. Garnsworthy ◽  
G. C. Ball ◽  
...  
1968 ◽  
Vol 111 (1) ◽  
pp. 529-550
Author(s):  
W KUTSCHERA ◽  
D PELTE ◽  
G SCHRIEDER

1979 ◽  
Vol 40 (C1) ◽  
pp. C1-221-C1-222
Author(s):  
S. Schumann ◽  
I. A. Sellin ◽  
R. Mann ◽  
H. J. Frischkorn ◽  
D. Rosich ◽  
...  

2008 ◽  
Vol 607 ◽  
pp. 64-66
Author(s):  
Nicolas Laforest ◽  
Jérémie De Baerdemaeker ◽  
Corine Bas ◽  
Charles Dauwe

Positron annihilation lifetime measurements on polymethylmethacrylate (PMMA) at low temperature were performed. Different discrete fitting procedures have been used to analyze the experimental data. It shows that the extracted parameters depend strongly on the fitting procedure. The physical meaning of the results is discussed. The blob model seems to give the best annihilation parameters.


2021 ◽  
Vol 103 (4) ◽  
Author(s):  
A. Turturică ◽  
C. Costache ◽  
P. Petkov ◽  
J.-P. Delaroche ◽  
M. Girod ◽  
...  

2021 ◽  
Vol 118 (25) ◽  
pp. 252105
Author(s):  
K. Yokoyama ◽  
J. S. Lord ◽  
J. Miao ◽  
P. Murahari ◽  
A. J. Drew

2018 ◽  
Vol 924 ◽  
pp. 269-272 ◽  
Author(s):  
Shinichi Mae ◽  
Takeshi Tawara ◽  
Hidekazu Tsuchida ◽  
Masashi Kato

For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.


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