Positron annihilation lifetime measurements on polymethylmethacrylate (PMMA) at low temperature were performed. Different discrete fitting procedures have been used to analyze the experimental data. It shows that the extracted parameters depend strongly on the fitting procedure. The physical meaning of the results is discussed. The blob model seems to give the best annihilation parameters.
For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.