In situ study on the evolution of atomic and electronic structure of LaTiO3/SrTiO3 system

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Hawoong Hong ◽  
Jessica L. McChesney ◽  
Friederike Wrobel ◽  
Xi Yan ◽  
Yan Li ◽  
...  
2016 ◽  
Vol 6 (18) ◽  
pp. 6778-6783 ◽  
Author(s):  
Bao-Hua Mao ◽  
Ethan Crumlin ◽  
Eric C. Tyo ◽  
Michael J. Pellin ◽  
Stefan Vajda ◽  
...  

APXPS was used to investigate the effect of oxygen adsorption on the band bending and electron affinity of ALD Al2O3, ZnO and TiO2 ultrathin films.


2021 ◽  
Vol 63 (8) ◽  
pp. 1166
Author(s):  
П.А. Дементьев ◽  
Е.В. Дементьева ◽  
М.Н. Лапушкин ◽  
Д.А. Смирнов ◽  
С.Н. Тимошнев

Using the method of photoelectron spectroscopy, an in situ study in ultrahigh vacuum of the electronic structure of a clean surface of tungsten oxidized at an oxygen pressure of 1 Torr and temperature of 1000 K was carried out. The spectra of photoemission from the valence band and core levels O 1s, O 2s, W 4f under synchrotron excitation in the photon energy range 80  600 eV are studied. It was found that a semiconductor film of tungsten oxide is formed, which contains various tungsten oxides with an oxidation state of 6+ to 4+. On the surface, mainly tungsten oxides with an oxidation state of 6+ are formed, the proportion of which gradually decreases with distance from the surface with an increase in tungsten oxides with an oxidation state of 4+.


2021 ◽  
pp. 104827
Author(s):  
Hua Zhou ◽  
Hui-Qiong Wang ◽  
Jin-Cheng Zheng ◽  
Xiao-Dan Wang ◽  
Yufeng Zhang ◽  
...  

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