Improved performance of submicrometer-gate GaAs MESFETs with an Al/sub 0.3/Ga/sub 0.7/As buffer layer grown by metal organic vapor phase epitaxy

K. Hiruma; M. Mori; E. Yanokura; H. Mizuta; S. Takahashi

doi:10.1109/16.19931

Improved performance of submicrometer-gate GaAs MESFETs with an Al/sub 0.3/Ga/sub 0.7/As buffer layer grown by metal organic vapor phase epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.19931 ◽

1989 ◽

Vol 36 (2) ◽

pp. 314-318 ◽

Cited By ~ 3

Author(s):

K. Hiruma ◽

M. Mori ◽

E. Yanokura ◽

H. Mizuta ◽

S. Takahashi

Keyword(s):

Buffer Layer ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic ◽

Improved Performance

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Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal–organic vapor phase epitaxy on sapphire substrates

Applied Physics Letters ◽

10.1063/1.120484 ◽

1997 ◽

Vol 71 (25) ◽

pp. 3694-3696 ◽

Cited By ~ 13

Author(s):

Lisen Cheng ◽

Ze Zhang ◽

Guoyi Zhang ◽

Dapeng Yu

Keyword(s):

Buffer Layer ◽

Vapor Phase ◽

Film Growth ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Sapphire Substrates ◽

Domain Boundaries ◽

Metal Organic

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Tunable twin-guide lasers with improved performance fabricated by metal-organic vapor phase epitaxy

IEEE Photonics Technology Letters ◽

10.1109/68.205609 ◽

1993 ◽

Vol 5 (3) ◽

pp. 273-275 ◽

Cited By ~ 10

Author(s):

T. Wolf ◽

S. Illek ◽

J. Rieger ◽

B. Borchert ◽

W. Thulke

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic ◽

Improved Performance

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Microstructure Evolution in Metal-organic Vapor Phase Epitaxy-Grown GaN with Different Low-Temperature Buffer Layer Annealing Time

2007 International Nano-Optoelectronics Workshop ◽

10.1109/inow.2007.4302904 ◽

2007 ◽

Author(s):

Hongtao Li ◽

Yi Luo ◽

Lai Wang ◽

Guangyi Xi ◽

Yang Jiang ◽

...

Keyword(s):

Low Temperature ◽

Buffer Layer ◽

Vapor Phase ◽

Microstructure Evolution ◽

Annealing Time ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic

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Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jb11 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JB11 ◽

Cited By ~ 11

Author(s):

Toshiya Ohata ◽

Yoshio Honda ◽

Masahito Yamaguchi ◽

Hiroshi Amano

Keyword(s):

Buffer Layer ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic

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Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.534 ◽

2004 ◽

Vol 43 (2) ◽

pp. 534-535 ◽

Cited By ~ 2

Author(s):

Hiroki Sugiyama ◽

Haruki Yokoyama ◽

Takashi Kobayashi

Keyword(s):

Thermal Diffusion ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic

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Oxygen-related defects in low phosphorous content GaAs1−yPy grown by metal organic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.366032 ◽

1997 ◽

Vol 82 (5) ◽

pp. 2263-2269 ◽

Cited By ~ 6

Author(s):

J. G. Cederberg ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic ◽

Phosphorous Content

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Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

Applied Physics Express ◽

10.1143/apex.1.071102 ◽

2008 ◽

Vol 1 ◽

pp. 071102 ◽

Cited By ~ 12

Author(s):

Tomonari Shioda ◽

Masakazu Sugiyama ◽

Yukihiro Shimogaki ◽

Yoshiaki Nakano

Keyword(s):

Kinetic Analysis ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Selective Area ◽

Metal Organic

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Structural and optical properties of vertically aligned InP nanowires grown by metal organic vapor phase epitaxy

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(04)00139-0 ◽

2004 ◽

Author(s):

Y WATANABE

Keyword(s):

Optical Properties ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Structural And Optical Properties ◽

Organic Vapor ◽

Metal Organic ◽

Vertically Aligned

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Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.101001 ◽

2010 ◽

Vol 49 (10) ◽

pp. 101001 ◽

Cited By ~ 8

Author(s):

Kimihito Ooyama ◽

Katsuya Sugawara ◽

Shinya Okuzaki ◽

Hiroyuki Taketomi ◽

Hideto Miyake ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Wide Range ◽

Metal Organic

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A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.03.028 ◽

2004 ◽

Vol 267 (1-2) ◽

pp. 140-144 ◽

Cited By ~ 51

Author(s):

A. Dadgar ◽

N. Oleynik ◽

D. Forster ◽

S. Deiter ◽

H. Witek ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

High Quality ◽

Organic Vapor ◽

Growth Method ◽

Metal Organic

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