A 3-to-78GHz Differential Distributed Amplifier with Ultra- Balanced Active Balun and Gain Boosting Techniques in 65-nm CMOS Process

2021 ◽  
Author(s):  
Jincheng Zhang ◽  
Tianxiang Wu ◽  
Yong Chen ◽  
Junyan Ren ◽  
Shunli Ma
Keyword(s):  
Cmos Process ◽  
Distributed Amplifier ◽  
Active Balun

scholarly journals Active Balun with Center-Tapped Inductor and Double-Balanced Gilbert Mixer for GNSS Applications

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1351
Author(s):  
Daniel Pietron ◽  
Tomasz Borejko ◽  
Witold Adam Pleskacz
Keyword(s):  
Phase Shift ◽  
Noise Figure ◽  
Low Noise ◽  
Global Navigation Satellite Systems ◽  
Cmos Process ◽  
Differential Signal ◽  
Satellite Systems ◽  
Active Balun ◽  
Noise Amplifier ◽  
Global Navigation Satellite

A new 1.575 GHz active balun with a classic double-balanced Gilbert mixer for global navigation satellite systems is proposed herein. A simple, low-noise amplifier architecture is used with a center-tapped inductor to generate a differential signal equal in amplitude and shifted in phase by 180°. The main advantage of the proposed circuit is that the phase shift between the outputs is always equal to 180°, with an accuracy of ±5°, and the gain difference between the balun outputs does not change by more than 1.5 dB. This phase shift and gain difference between the outputs are also preserved for all process corners, as well as temperature and voltage supply variations. In the balun design, a band calibration system based on a switchable capacitor bank is proposed. The balun and mixer were designed with a 110 nm CMOS process, consuming only a 2.24 mA current from a 1.5 V supply. The measured noise figure and conversion gain of the balun and mixer were, respectively, NF = 7.7 dB and GC = 25.8 dB in the band of interest.

A 2–40 GHz Active Balun Using 0.13 $\mu{\rm m}$ CMOS Process

2009 ◽  
Vol 19 (3) ◽  
pp. 164-166 ◽  
Author(s):  
Bo-Jiun Huang ◽  
Bo-Jr Huang ◽  
Kun-You Lin ◽  
Huei Wang
Keyword(s):  
Cmos Process ◽  
Active Balun

An Energy-Efficient Receiver for Human Body Communication

2012 ◽  
Vol 195-196 ◽  
pp. 84-89
Author(s):  
Da Hui Zhang ◽  
Ze Dong Nie ◽  
Feng Guan ◽  
Lei Wang
Keyword(s):  
Low Power ◽  
Human Body ◽  
Data Transmission ◽  
Energy Efficient ◽  
Low Noise ◽  
Variable Gain Amplifier ◽  
Cmos Process ◽  
Variable Gain ◽  
Active Balun ◽  
Noise Amplifier

A low-power, wideband signaling receiver for data transmission through a human body was presented in this paper. The receiver utilized a novel implementation of energy-efficient wideband impulse communication that uses the human body as the transmission medium, provides low power consumption, high reception sensitivity. The receiver consists of a low-noise amplifier, active balun, variable gain amplifier (VGA) Gm-C filter, comparator, and FSK demodulator. It was designed with 0.18um CMOS process in an active area of 1.54mm0.414mm. Post-simulation showed that the receiver has a gain range of-2dB~40dB. The receiver consumes 4mW at 1.8V supply and achieves transmission bit energy of 0.8nJ/bit.

scholarly journals Design and Simulation Study of Active Baluns Circuits for WiMAX Applications

2019 ◽  
Vol 7 (1) ◽  
Author(s):  
Frederick Ray I. Gomez ◽  
John Richard E. Hizon ◽  
Maria Theresa G. De Leon
Keyword(s):  
Phase Difference ◽  
Simulation Study ◽  
Noise Figure ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Common Source ◽  
Cmos Process ◽  
Common Gate ◽  
Active Balun

The paper presents a design and simulation study of three active balun circuits implemented in a standard 90nm Complementary Metal-Oxide Semiconductor (CMOS) process namely: (1) common-source/drain active balun; (2) common-gate with common-source active balun; and (3) differential active balun.  The active balun designs are intended for Worldwide Interoperability for Microwave Access (WiMAX) applications operating at frequency 5.8GHz and with supply voltage of 1V.  Measurements are taken for parameters such as gain difference, phase difference, and noise figure.  All designs achieved gain difference of less than 0.23dB, phase difference of 180° ± 7.1°, and noise figure of 7.2–9.85dB, which are comparable to previous designs and researches.  Low power consumption attained at the most 4.45mW.

A High Bandwidth (DC-40 GHz) Pseudo Differential Distributed Amplifier in 0.18-μm RF CMOS

2017 ◽  
Vol 26 (12) ◽  
pp. 1750191 ◽  
Author(s):  
Majid Babaeinik ◽  
Massoud Dousti ◽  
Mohammad Bagher Tavakoli
Keyword(s):  
Return Loss ◽  
Noise Figure ◽  
Cmos Process ◽  
Rf Cmos ◽  
Bandwidth Extension ◽  
Distributed Amplifier ◽  
High Bandwidth ◽  
Simulation Results ◽  
Minimum Noise ◽  
Minimum Noise Figure

This study presents a CMOS distributed amplifier (DA) with pseudo differential amplifying that achieves DC-40[Formula: see text]GHz bandwidth (BW) in 0.18-[Formula: see text]m RF CMOS process. The DA with three-stage amplifying cells was proposed to improve the DA performance. The inter-stage was composed of pseudo differential amplifying for bandwidth extension. By incorporating the pseudo differential amplifier configuration and capacitor-less circuit in the stages, the DA provides average gain and high bandwidth. The simulation results showed that the DA has a S[Formula: see text] of 6.4[Formula: see text]dB, 3-dB BW from DC up to 40[Formula: see text]GHz. It also has a minimum noise figure (NF) of 4.27[Formula: see text]dB, one dB compression point (P[Formula: see text] of [Formula: see text]3.5[Formula: see text]dBm, a high reverse isolation S[Formula: see text] of less than [Formula: see text]15[Formula: see text]dB, an input return loss S[Formula: see text] and output return loss S[Formula: see text] of less than [Formula: see text]16 and [Formula: see text]12[Formula: see text]dB, respectively. It consumes 115[Formula: see text]mW and occupies a total active area of 0.27[Formula: see text]mm2.

scholarly journals Design of Common-gate with Common-source Active Balun for WiMAX Receiver Front-end

2019 ◽  
pp. 1-9
Author(s):  
Frederick Ray I. Gomez ◽  
Maria Theresa G. De Leon ◽  
John Richard E. Hizon
Keyword(s):  
Phase Difference ◽  
Noise Figure ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Common Source ◽  
Cmos Process ◽  
Common Gate ◽  
Active Balun ◽  
The Common

This paper presents a design and simulation study of a common-gate with common-source active balun circuit implemented in a standard 90-nm complementary metal-oxide semiconductor (CMOS) process.  The active balun design is intended for worldwide interoperability for microwave access (WiMAX) application, with operating frequency of 5.8 GHz and supply voltage of 1 V.  Measurements are taken for parameters namely gain difference, phase difference, and noise figure.  The common-source active balun design achieved a minimal gain difference of  0.04 dB, phase difference of 180 ± 1.5 degrees, and noise figure of 8.76 dB, which are comparable to past active balun designs and researches.  The design eventually achieved a low power consumption of 4.45 mW.

scholarly journals Design and Performance Investigation of a New Distributed Amplifier Architecture for 40 and 100 Gb/s Optical Receivers

2015 ◽  
Vol 14 (5) ◽  
pp. 5661-5686
Author(s):  
Essra E. Al-Bayati ◽  
R. S. Fyath
Keyword(s):  
Communication Systems ◽  
Noise Figure ◽  
Complementary Metal Oxide Semiconductor ◽  
Low Noise ◽  
Ultra Wideband ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Optical Receivers ◽  
Distributed Amplifier ◽  
Design Scheme

The design of distributed amplifiers (DAs) is one of the challenging aspects in emerging ultra high bit rate optical communication systems. This is especially important when implementation in submicron silicon complementary metal oxide semiconductor (CMOS) process is considered. This work presents a novel design scheme for DAs suitable for frontend amplification in 40 and 100 Gb/s optical receivers. The goal is to achieve high flat gain and low noise figure (NF) over the ultra wideband operating bandwidth (BW). The design scheme combines shifted second tire (SST) matrix configuration with cascode amplification cell configuration and uses m-derived technique. Performance investigation of the proposed DA architecture is carried out and the results are compared with that of other DA architectures reported in the literature. The investigation covers the gain and NF spectra when the DAs are implemented in 180, 130, 90, 65 and 45 CMOS standards.The simulation results reveal that the proposed DA architecture offers the highest gain with highest degree of flatness and low NF when compared with other DA configurations. Gain-BW products of 42772 and 21137 GHz are achieved when the amplifier is designed for 40 and 100 Gb/s operation, respectively, using 45 nm CMOS standard. Thesimulation is performed using AWR Microwave Office (version 10).

scholarly journals Differential Active Balun Design for WiMAX Applications

2019 ◽  
pp. 1-8
Author(s):  
Frederick Ray I. Gomez ◽  
John Richard E. Hizon ◽  
Maria Theresa G. De Leon
Keyword(s):  
Phase Difference ◽  
Simulation Study ◽  
Noise Figure ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Low Power Consumption ◽  
Cmos Process ◽  
Active Balun

The paper presents a design and simulation study of a differential active balun circuit implemented in a standard 90 nm complementary metal-oxide semiconductor (CMOS) process.  The active balun design is intended for Worldwide Interoperability for Microwave Access (WiMAX) applications operating at frequency 5.8 GHz and with supply voltage of 1V.  Measurements are taken for parameters such as gain difference, phase difference, and noise figure.  The differential active balun design achieved gain difference of less than 0.23 dB, phase difference of 180° ± 3.4°, and noise figure of 9.78 dB, which are comparable to past active balun designs and researches.  Lastly, the design achieved a low power consumption of 3.6 mW.

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