Proposal of N-channel heterostructure dynamic threshold-voltage MOSFET (HDTMOS) with P-type doped SiGe body

2003 ◽  
Author(s):  
T. Kawashima ◽  
T. Takagi ◽  
Y. Hara ◽  
Y. Kanzawa ◽  
A. Inoue ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
P Type

A Novel Low-Voltage N-Channel Heterostructure Dynamic Threshold Voltage MOSFET (N-HDTMOS) With p-Type Doped SiGe Body

2004 ◽  
Vol 25 (1) ◽  
pp. 28-30 ◽  
Author(s):  
T. Kawashima ◽  
Y. Hara ◽  
Y. Kanzawa ◽  
H. Sorada ◽  
A. Inoue ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Low Voltage ◽  
Dynamic Threshold ◽  
P Type

scholarly journals Ground Plane Impact on Performance of Relaxed Ge FinFETs

2019 ◽  
Vol 14 (1) ◽  
pp. 1-6
Author(s):  
Alberto Vinícius Oliveira ◽  
Guilherme Vieira Gonçalves ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Jérôme Mitard ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Computer Aided Design ◽  
Doping Concentration ◽  
Ground Plane ◽  
Subthreshold Swing ◽  
Voltage Variation ◽  
Electrostatic Coupling ◽  
P Type ◽  
Aided Design ◽  
Channel Region

The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

scholarly journals Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

2010 ◽  
Vol 58 (9) ◽  
pp. 2319-2325 ◽  
Author(s):  
Sheng-Chun Wang ◽  
Pin Su ◽  
Kun-Ming Chen ◽  
Kuo-Hsiang Liao ◽  
Bo-Yuan Chen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Small Signal ◽  
Temperature Dependent ◽  
Noise Characteristics

Analog Performance of Dynamic Threshold Voltage SOI MOSFET.

2019 ◽  
Vol 14 (1) ◽  
pp. 169-175 ◽  
Author(s):  
Jefferson O. Amaro ◽  
Paula G. Agopian ◽  
João A. Martino
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Soi Mosfet ◽  
Analog Performance

Fabricaton Ofactive Devices and Logic Gates on Fibers

2003 ◽  
Vol 769 ◽  
Author(s):  
YongWoo Choi ◽  
Ioannis Kymissis ◽  
Annie Wang ◽  
Akintunde I. Akinwande
Keyword(s):  
Threshold Voltage ◽  
Electronic Structures ◽  
Low Cost ◽  
Logic Gates ◽  
Wearable Electronics ◽  
Drain Voltage ◽  
Large Area ◽  
Active Devices ◽  
P Type ◽  
A Current

AbstractTextiles are a suitable substrate for large area, flexible and wearable electronics because of their excellent flexibility, mechanical properties and low cost manufacturability. The ability to fabricate active devices on fiber is a key step for achieving large area and flexible electronic structures. We fabricated transistors and inverters with a-Si film and pentacene film on Kapton film and cut them into fibers. The a-Si TFT showed a threshold voltage of 8.5 V and on/off ratio of 103 at a drain voltage of 10 V. These are similar to the characteristics of a TFT fabricated on a glass substrate at the same time. The maximum gain of the inverter with an enhancement n-type load was 6.45 at a drain voltage of 10 V. The pentacene OTFT showed a threshold voltage of -8 V and on/off ratio of 103 at a drain voltage of -30 V. The inverter with a depletion p-type load showed a voltage inversion but the inversion occurred at the wrong voltage. The antifuse was successfully programmed with a voltage pulse and also a current pulse. The resistance decreased from 10 GΩ to 2 kΩ after the programming.

Sign in / Sign up

Export Citation Format

Share Document