P-channel InGaN-HFET structure based on polarization doping

61st Device Research Conference. Conference Digest (Cat. No.03TH8663) ◽

10.1109/drc.2003.1226852 ◽

2004 ◽

Author(s):

T. Zimmermann ◽

M. Neuburger ◽

M. Kunze ◽

I. Daumiller ◽

A. Denisenko ◽

...

Download Full-text