Online temperature estimation of a high-power 4.5 kV IGBT module based on the gate-emitter threshold voltage

2015 ◽  
Author(s):  
Martin Hoeer ◽  
Markus Meissner ◽  
Felipe Filsecker ◽  
Steffen Bernet
Keyword(s):  
Threshold Voltage ◽  
High Power ◽  
Temperature Estimation ◽  
Igbt Module

scholarly journals An Improved UU-MESFET with High Power Added Efficiency

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 573 ◽  
Author(s):  
Hujun Jia ◽  
Mei Hu ◽  
Shunwei Zhu
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Power Added Efficiency ◽  
Effect Transistor ◽  
The Relationship

An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density

2013 ◽  
Vol 303-306 ◽  
pp. 1902-1907 ◽  
Author(s):  
Yi Bo Wu ◽  
Guo You Liu ◽  
Ning Hua Xu ◽  
Ze Chun Dou
Keyword(s):  
Thermal Resistance ◽  
Power Density ◽  
High Power ◽  
Resistance Management ◽  
Equivalent Circuit Model ◽  
Element Model ◽  
Equivalent Model ◽  
High Power Density ◽  
Power Module ◽  
Igbt Module

As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.

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