Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 ◽

10.1109/gaas.1995.528971 ◽

2002 ◽

Author(s):

K.Y. Hur ◽

R.A. McTaggart ◽

B.W. LeBlanc ◽

W.E. Hoke ◽

P.J. Lemonias ◽

...

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