Fabrication of (110) GOI layers by Ge condensation of SiGe/ (110) SOI structures and application to pMOSFET devices

2007 International Conference on Industrial and Information Systems ◽

10.1109/iciinfs.2007.4579231 ◽

2007 ◽

Author(s):

S. Dissanayake ◽

S. Sugahara ◽

M. Takenaka ◽

S. Takagi

Download Full-text