GaAsSbN: a material for 1.3-1.55 μm emission

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850357 ◽

2002 ◽

Author(s):

G. Ungaro ◽

L. Sagnes ◽

G. Le Roux ◽

L. Largeau ◽

G. Patriarche ◽

...

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