State filling in InAs quantum-dot laser structures

2004 ◽  
Vol 40 (12) ◽  
pp. 1639-1645 ◽  
Author(s):  
S. Osborne ◽  
P. Blood ◽  
P. Smowton ◽  
J. Lutti ◽  
Y.C. Xin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Laser ◽  
Inas Quantum Dot ◽  
State Filling

Thermal Analysis of InAs Quantum Dot Laser Diodes with an Additional Au Layer on p-Metal

2007 ◽  
Vol 50 (6) ◽  
pp. 1936
Author(s):  
Jung Hwa Jung ◽  
Hyun Jae Kim ◽  
Kyoung Chan Kim ◽  
Jung Il Lee ◽  
Il Ki Han
Keyword(s):  
Thermal Analysis ◽  
Quantum Dot ◽  
Laser Diodes ◽  
Quantum Dot Laser ◽  
Inas Quantum Dot

Gain and linewidth enhancement factor in InAs quantum-dot laser diodes

1999 ◽  
Vol 11 (12) ◽  
pp. 1527-1529 ◽  
Author(s):  
T.C. Newell ◽  
D.J. Bossert ◽  
A. Stintz ◽  
B. Fuchs ◽  
K.J. Malloy ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Enhancement Factor ◽  
Laser Diodes ◽  
Linewidth Enhancement Factor ◽  
Quantum Dot Laser ◽  
Inas Quantum Dot ◽  
Linewidth Enhancement

Growth of InAs quantum dot laser structures on silicon

2012 ◽  
Author(s):  
Alan Liu ◽  
Chong Zhang ◽  
Arthur Gossard ◽  
John Bowers
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Laser ◽  
Inas Quantum Dot

Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments

2004 ◽  
Author(s):  
Alexander I. Tartakovskii ◽  
Kristian M. Groom ◽  
Ali M. Adawi ◽  
Aristide LemaŽtre ◽  
David J. Mowbray ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Stimulated Emission ◽  
Pump Probe ◽  
Quantum Dot Laser ◽  
Inas Quantum Dot

scholarly journals Lasing Characteristics of GaAs-Based 1300 nm Wavelength Region InAs Quantum Dot Laser Diode

2009 ◽  
Vol 18 (4) ◽  
pp. 266-271 ◽  
Author(s):  
K.W. Kim ◽  
N.K. Choa ◽  
J.D. Song ◽  
J.I. Lee ◽  
Jeong-Ho Park ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Laser Diode ◽  
Wavelength Region ◽  
Quantum Dot Laser ◽  
Inas Quantum Dot

scholarly journals Sole Excited-State InAs Quantum Dot Laser on Silicon With Strong Feedback Resistance

2021 ◽  
Vol 8 ◽  
Author(s):  
Jia-Jian Chen ◽  
Zi-Hao Wang ◽  
Wen-Qi Wei ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Excited State ◽  
Quantum Dot ◽  
Quantum Well ◽  
Quantum Well Lasers ◽  
Laser Source ◽  
Quantum Dot Lasers ◽  
Optical Isolator ◽  
Quantum Dot Laser ◽  
On Chip ◽  
Inas Quantum Dot

A feedback insensitive laser is a prerequisite for a desirable laser source for silicon photonic integration, as it is not possible to include an on-chip optical isolator. This work investigates the feedback insensitivity of an InAs/GaAs quantum dot laser epitaxially grown on an Si (001) substrate by operating in a sole excited state. The experimental results show that the sole excited-state lasing InAs quantum dot lasers on Si are less sensitive to external optical feedback than both Fabry-Perot and distributed-feedback quantum-well lasers. By comparing the laser behavior under different feedback levels, sole excited-state InAs quantum dot lasers on Si exhibit at least a 28 dB stronger feedback tolerance than quantum-well lasers. This result proposes a possible route for a high feedback insensitive laser as an on-chip light source towards Si waveguide integration with the absence of an optical isolator.

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