Switching Speed and Dissipation in Fast, Thin-Film Cryotron Circuits

1962 ◽  
Vol 50 (12) ◽  
pp. 2452-2464 ◽  
Norman Meyers
RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79668-79680 ◽  
K. S. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
Vasant Sathe ◽  
V. Ganesan ◽  

A nickel oxide (NiO) thin film with better reversibility, high optical modulation, and enhanced coloration efficiency with fast switching time was prepared using radio frequency (rf) magnetron sputtering technique.

2014 ◽  
Vol 981 ◽  
pp. 830-833
Ze Ying Wang ◽  
Dong Xing Wang ◽  
Yong Shuang Zhang ◽  
Yue Yue Wang ◽  
Jing Hua Yin ◽  

We have fabricated Au/CuPc/Al/CuPc/Au organic thin film transistor (OTFTs) using vacuum deposition with CuPc thin films of stable chemical property and semi conductive Al gate thin film electrode. The static and dynamic characteristics were tested at room temperature. The test results show that the switching speed of the OTFT is ton=2.68ms, toff= 1.32ms, amplification bandwidth is 400Hz, and the cutoff frequency fc=400Hz when inputting 100Hz small square wave signal. Our OTFT has submicron conductive channel, shows operation characteristics of high frequency, high speed and high current density. Good static and dynamic characteristics of OTFT can be obtained by controlling appropriate Al gate film thickness and CuPc film thickness.

2021 ◽  
Zhehao Xu ◽  
Xiao Su ◽  
Sicong Hua ◽  
Jiwei Zhai ◽  
Sannian Song ◽  

Abstract For high-performance data centers, huge data transfer, reliable data storage and emerging in-memory computing require memory technology with the combination of accelerated access, large capacity and persistence. As for phase-change memory, the Sb-rich compounds Sb7Te3 and GeSb6Te have demonstrated fast switching speed and considerable difference of phase transition temperature. A multilayer structure is built up with the two compounds to reach three non-volatile resistance states. Sequential phase transition in a relationship with the temperature is confirmed to contribute to different resistance states with sufficient thermal stability. With the verification of nanoscale confinement for the integration of Sb7Te3/GeSb6Te multilayer thin film, T-shape PCM cells are fabricated and two SET operations are executed with 40 ns-width pulses, exhibiting good potential for the multi-level PCM candidate.

1998 ◽  
Vol 508 ◽  
J. Aschenbeck ◽  
Y. Chen ◽  
F. Clough ◽  
Y. Z. Xu ◽  
E. M. Sankara Narayanan ◽  

AbstractFor the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

1996 ◽  
Vol 32 (5) ◽  
pp. 3584-3586 ◽  
H. Fang ◽  
J.-G. Zhu

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