Switching Speed and Dissipation in Fast, Thin-Film Cryotron Circuits

1962 ◽  
Vol 50 (12) ◽  
pp. 2452-2464 ◽  
Author(s):  
Norman Meyers
Keyword(s):  
Thin Film ◽  
Switching Speed

Improved electrochromic performance of a radio frequency magnetron sputtered NiO thin film with high optical switching speed

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79668-79680 ◽  
Author(s):  
K. S. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
Vasant Sathe ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Optical Switching ◽  
Switching Time ◽  
Rf Magnetron Sputtering ◽  
Optical Modulation ◽  
Switching Speed ◽  
Coloration Efficiency ◽  
Fast Switching ◽  
Nio Thin Film

A nickel oxide (NiO) thin film with better reversibility, high optical modulation, and enhanced coloration efficiency with fast switching time was prepared using radio frequency (rf) magnetron sputtering technique.

The Dynamic Characteristics of Al Gate CuPc Thin Film Transistor

2014 ◽  
Vol 981 ◽  
pp. 830-833
Author(s):  
Ze Ying Wang ◽  
Dong Xing Wang ◽  
Yong Shuang Zhang ◽  
Yue Yue Wang ◽  
Jing Hua Yin ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Dynamic Characteristics ◽  
High Speed ◽  
High Current Density ◽  
Thin Film Transistor ◽  
Cutoff Frequency ◽  
Organic Thin Film ◽  
Switching Speed ◽  
Static And Dynamic Characteristics

We have fabricated Au/CuPc/Al/CuPc/Au organic thin film transistor (OTFTs) using vacuum deposition with CuPc thin films of stable chemical property and semi conductive Al gate thin film electrode. The static and dynamic characteristics were tested at room temperature. The test results show that the switching speed of the OTFT is ton=2.68ms, toff= 1.32ms, amplification bandwidth is 400Hz, and the cutoff frequency fc=400Hz when inputting 100Hz small square wave signal. Our OTFT has submicron conductive channel, shows operation characteristics of high frequency, high speed and high current density. Good static and dynamic characteristics of OTFT can be obtained by controlling appropriate Al gate film thickness and CuPc film thickness.

Non-volatile multi-level cell storage via sequential phase transition in Sb7Te3/GeSb6Te multilayer thin film

2021 ◽  
Author(s):  
Zhehao Xu ◽  
Xiao Su ◽  
Sicong Hua ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Data Storage ◽  
High Performance ◽  
Data Transfer ◽  
Multilayer Thin Film ◽  
Switching Speed ◽  
Huge Data ◽  
Multi Level ◽  
Sequential Phase

Abstract For high-performance data centers, huge data transfer, reliable data storage and emerging in-memory computing require memory technology with the combination of accelerated access, large capacity and persistence. As for phase-change memory, the Sb-rich compounds Sb7Te3 and GeSb6Te have demonstrated fast switching speed and considerable difference of phase transition temperature. A multilayer structure is built up with the two compounds to reach three non-volatile resistance states. Sequential phase transition in a relationship with the temperature is confirmed to contribute to different resistance states with sufficient thermal stability. With the verification of nanoscale confinement for the integration of Sb7Te3/GeSb6Te multilayer thin film, T-shape PCM cells are fabricated and two SET operations are executed with 40 ns-width pulses, exhibiting good potential for the multi-level PCM candidate.

Stepped Gate Polysilicon Thin-Film Transistor for Large Area Power Applications

1998 ◽  
Vol 508 ◽  
Author(s):  
J. Aschenbeck ◽  
Y. Chen ◽  
F. Clough ◽  
Y. Z. Xu ◽  
E. M. Sankara Narayanan ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Two Dimensional ◽  
Large Area ◽  
Switching Speed ◽  
Field Plate ◽  
First Time

AbstractFor the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Switching speed of longitudinal thin film recording media

1996 ◽  
Vol 32 (5) ◽  
pp. 3584-3586 ◽  
Author(s):  
H. Fang ◽  
J.-G. Zhu
Keyword(s):  
Thin Film ◽  
Recording Media ◽  
Switching Speed
Sign in / Sign up

Export Citation Format

Share Document