Low-frequency noise measurement and analysis in organic light-emitting diodes

2006 ◽  
Vol 27 (7) ◽  
pp. 555-557 ◽  
Author(s):  
Lin Ke ◽  
Xin Yue Zhao ◽  
R.S. Kumar ◽  
Soo Jin Chua
Keyword(s):  
Light Emitting Diodes ◽  
Low Frequency ◽  
Noise Measurement ◽  
Organic Light Emitting Diodes ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Light Emitting ◽  
Organic Light ◽  
Measurement And Analysis

Low Frequency Noise Correlation between Electrical and Optical Signals for Predicting Degradation in Organic Light Emitting Diodes

2009 ◽  
Vol 1195 ◽  
Author(s):  
Soo Jin Chua ◽  
Sha Huang ◽  
Lin Ke
Keyword(s):  
Correlation Coefficient ◽  
Light Emitting Diodes ◽  
Low Frequency ◽  
Organic Light Emitting Diodes ◽  
Frequency Noise ◽  
Light Emitting ◽  
Optical Signals ◽  
Organic Light ◽  
Device Lifetime ◽  
Duration Of Operation

AbstractThe Low Frequency Noise (LFN) characteristics of Organic Light Emitting Diodes (OLEDs) were investigated in relation to device degradation. The standard layer structure of indium tin oxide (anode), hole transport layer, Alq3, Lithium Fluoride and Aluminium (cathode) was used. With duration of operation, the device degradation is characterized by an eventual drop in the luminance level and the electroluminescence efficiency. Additionally, the driving voltage at a fixed current and the LFN increase gradually during device degradation, accompanied with the formation of non-emissive areas (dark spots). It is found that the coefficient of correlation between voltage fluctuations across the device and low frequency fluctuations of the optical signals remains constant for an initial period and then decreases exponentially with duration of operation and is a sensitive parameter to predict OLED device lifetime. For a number of OLEDs driven at constant current, the device with higher initial correlation coefficient possesses a longer lifetime. The direct relation between LFN correlation and device lifetime can be explained by carrier recombination mechanisms at the microscopic level. An increase in trap density can reduce the internal radiative recombination rate which at the macroscopic level is reflected by a decrease in the correlation coefficient.

Reliability investigation of light-emitting diodes via low frequency noise characteristics

2015 ◽  
Vol 55 (1) ◽  
pp. 52-61 ◽  
Author(s):  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Justinas Glemža ◽  
Grigorij Muliuk ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Light Emitting ◽  
Noise Characteristics

Low-frequency noise of GaN-based ultraviolet light-emitting diodes

2005 ◽  
Vol 97 (12) ◽  
pp. 123107 ◽  
Author(s):  
S. L. Rumyantsev ◽  
S. Sawyer ◽  
M. S. Shur ◽  
N. Pala ◽  
Yu. Bilenko ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

scholarly journals Low Frequency Noise Measurement and Analysis of Capacitive Micro-Accelerometers: Temperature Effect

2008 ◽  
Vol 47 (6) ◽  
pp. 5270-5273 ◽  
Author(s):  
Faisal Mohd-Yasin ◽  
David J. Nagel ◽  
D. S. Ong ◽  
Can E. Korman ◽  
H. T. Chuah
Keyword(s):  
Temperature Effect ◽  
Low Frequency ◽  
Noise Measurement ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Measurement And Analysis

Understanding of the aging pattern in quantum dot light-emitting diodes using low-frequency noise

Nanoscale ◽  
2020 ◽  
Vol 12 (29) ◽  
pp. 15888-15895 ◽  
Author(s):  
Kookjin Lee ◽  
Jinyoung Yun ◽  
Suhyeon Lee ◽  
Jaeick Song ◽  
Yeonsu Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Aging Effects ◽  
Light Emitting ◽  
Positive Aging ◽  
Analysis Methods

The negative and positive aging effects of quantum dot (QD) light-emitting diodes (QLEDs) have received considerable attention in recent years and various analysis methods have been discussed.

Low-Frequency Noise Analysis of Electrostatic Discharge Tolerance of InGaN Light-Emitting Diodes

2013 ◽  
Vol 60 (11) ◽  
pp. 3794-3798 ◽  
Author(s):  
Tzung-Te Chen ◽  
Han-Kuei Fu ◽  
Chun-Fan Dai ◽  
Chien-Ping Wang ◽  
Chun-Wen Chu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Electrostatic Discharge ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Light Emitting
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