Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study

2010 ◽  
Author(s):  
Andrew R. Brown ◽  
Niza M. Idris ◽  
Jeremy R. Watling ◽  
Asen Asenov
Keyword(s):  
Simulation Study ◽  
Threshold Voltage ◽  
Three Dimensional ◽  
Statistical Simulation ◽  
Full Scale ◽  
Metal Gate

scholarly journals Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 425-429 ◽  
Author(s):  
E. Amirante ◽  
G. Iannaccone ◽  
B. Pellegrini
Keyword(s):  
Threshold Voltage ◽  
Random Distribution ◽  
Three Dimensional ◽  
Oxide Thickness ◽  
Statistical Simulation ◽  
Deep Submicron ◽  
Doping Density ◽  
Poisson Solver ◽  
Threshold Voltage Distribution ◽  
The Vertical Distribution

We have performed a three-dimensional statistical simulation of the threshold voltage distribution of deep submicron nMOSFETs, as a function of gate length, doping density, oxide thickness, based on a multigrid non-linear Poisson solver. We compare our results with statistical simulations presented in the literature, and show that essentially only the vertical distribution of dopants has an effect on the standard deviation of the threshold voltage.

A Simulation Study on Minimizing Threshold Voltage Variability by Optimizing Oxygen Vacancy Concentration Under Metal Gate Granularity

2020 ◽  
Vol 41 (9) ◽  
pp. 1396-1399
Author(s):  
Madhu Padmanabha Sumangala ◽  
Ahish Shylendra ◽  
David J. Frank ◽  
Takashi Ando ◽  
Amit Ranjan Trivedi
Keyword(s):  
Oxygen Vacancy ◽  
Simulation Study ◽  
Threshold Voltage ◽  
Vacancy Concentration ◽  
Oxygen Vacancy Concentration ◽  
Metal Gate

scholarly journals Design,Simulation And Analysis of Junction Version Multi-Fin FINFET

2021 ◽  
Author(s):  
Srinivasa Rao K ◽  
Vishnu Vandana P
Keyword(s):  
Performance Improvement ◽  
Simulation Study ◽  
Threshold Voltage ◽  
Statistical Simulation ◽  
Electrical Parameters ◽  
Technology Node ◽  
Technology Nodes ◽  
Output Conductance ◽  
Analog Parameters ◽  
Intrinsic Gain

Abstract This paper presents a 3-D statistical simulation study of Multi-fin junction FinFET for different technology nodes 32nm, 24 nm & 10 nm. For each and every technology node their corresponding Electrical parameters like on current (Ion), off current (Ioff), threshold voltage (Vth) are reported in the paper and also RF/Analog parameters like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd) are reported. And also parameters like Electric field (E), Electron density (ne), Electron mobility (µ) which are measured across the device length are simulated. The proposed structure showed performance improvement in all the parameters when the technology node is decreased.

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si

Finite Element Simulation of a Strong-Post W-Beam Guardrail System

SIMULATION ◽  
2002 ◽  
Vol 78 (10) ◽  
pp. 587-599 ◽  
Author(s):  
Ali O. Atahan
Keyword(s):  
Finite Element ◽  
Three Dimensional ◽  
Full Scale ◽  
Nonlinear Finite Element ◽  
Crash Test ◽  
Original Design ◽  
Dynamic Interactions ◽  
Crash Testing ◽  
Element Simulation ◽  
Test Requirements

Computer simulation of vehicle collisions has improved significantly over the past decade. With advances in computer technology, nonlinear finite element codes, and material models, full-scale simulation of such complex dynamic interactions is becoming ever more possible. In this study, an explicit three-dimensional nonlinear finite element code, LS-DYNA, is used to demonstrate the capabilities of computer simulations to supplement full-scale crash testing. After a failed crash test on a strong-post guardrail system, LS-DYNA is used to simulate the system, determine the potential problems with the design, and develop an improved system that has the potential to satisfy current crash test requirements. After accurately simulating the response behavior of the full-scale crash test, a second simulation study is performed on the system with improved details. Simulation results indicate that the system performs much better compared to the original design.

Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor

2021 ◽  
Author(s):  
Rishu Chaujar ◽  
Mekonnen Getnet Yirak
Keyword(s):  
Threshold Voltage ◽  
Positive Impact ◽  
Drain Current ◽  
Interface Trap ◽  
Metal Gate ◽  
High K ◽  
Current Threshold ◽  
Subthreshold Voltage ◽  
Output Characteristics ◽  
The Impact

Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using ‘‘ATLAS-3D’’ device simulation tool. Effect of different interface trap charge on the output characteristics of double and triple metal gate high-k gate all around junctionless NWFET biosensor was studied. Output characteristics, like transconductance, output conductance,drain current, threshold voltage, subthreshold voltage and switching ratio, including APTES biomolecule, have been studied in both devices. 184% improvement has been investigated in shifting threshold voltage in a triple metal gate compared to a double metal gate when APTES biomolecule immobilizes on the nanogap cavity region under negative ITCs. Based on this finding, drain off-current ratio and shifting threshold voltage were considered as sensing metrics when APTES biomolecule immobilizes in the nanogap cavity under negative ITCs which is significant for Alzheimer's disease detection. We signifies a negative ITC has a positive impact on our proposed biosensor device compared to positive and neutral ITCs.

Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling

2021 ◽  
Vol 314 ◽  
pp. 119-126
Author(s):  
Yusuke Oniki ◽  
Lars Åke Ragnarsson ◽  
Hideaki Iino ◽  
Daire Cott ◽  
Boon Teik Chan ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Metal Gate ◽  
Unit Process ◽  
Device Scaling ◽  
Interface Dipole ◽  
Device Integration ◽  
Multiple Threshold ◽  
Long Channel

This paper addresses challenges and solutions of replacement metal gate of gate-all-around nanosheet devices. The unit process and integration solutions for the metal gate patterning as well as interface dipole patterning to offer multiple threshold voltage have been developed. The challenges of long channel device integration are also discussed.

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