Double-Gate RESURF Lateral Insulated Gate Bipolar Transistor with Built-in p-Channel MOSFET for Active Conductivity Modulation Control Throughout Drift Region

2022 ◽  
pp. 1-1
Author(s):  
Junjie Yang ◽  
Meng Zhang ◽  
Yanlin Wu ◽  
Maojun Wang ◽  
Jin Wei
Keyword(s):  
Bipolar Transistor ◽  
Drift Region ◽  
Double Gate ◽  
Insulated Gate Bipolar Transistor ◽  
Modulation Control

Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

2005 ◽  
Vol 483-485 ◽  
pp. 917-920 ◽  
Author(s):  
Lin Zhu ◽  
S. Balachandran ◽  
T. Paul Chow
Keyword(s):  
Numerical Simulations ◽  
High Voltage ◽  
Bipolar Transistor ◽  
Drift Region ◽  
Insulated Gate Bipolar Transistor

In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a much higher conductivity modulation in the drift region.

Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

2012 ◽  
Vol 33 (12) ◽  
pp. 1684-1686 ◽  
Author(s):  
Huaping Jiang ◽  
Jin Wei ◽  
Bo Zhang ◽  
Wanjun Chen ◽  
Ming Qiao ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Band To Band Tunneling ◽  
Tunneling Injection

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

2015 ◽  
Vol 36 (6) ◽  
pp. 591-593 ◽  
Author(s):  
Hao Feng ◽  
Wentao Yang ◽  
Yuichi Onozawa ◽  
Takashi Yoshimura ◽  
Akira Tamenori ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor
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