Nanoscale Band Gap Engineering And Modulation Doping In GaAs-AiGaAs Quantum Well Structures By Focused Ion Beam

2005 ◽  
Author(s):  
P.M. Petroff ◽  
Y.J. Li ◽  
Z. Xu ◽  
S. Sasa ◽  
T. Deruelle ◽  
...  
Keyword(s):  
Quantum Well ◽  
Band Gap ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Modulation Doping ◽  
Band Gap Engineering ◽  
Quantum Well Structures

Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation

1992 ◽  
Author(s):  
Howard E. Jackson ◽  
Ahn G. Choo ◽  
Bernard L. Weiss ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Ion Beam Implantation

Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures

1988 ◽  
Vol 126 ◽  
Author(s):  
P. M. Petroff ◽  
Xueyu Qian ◽  
Per Olof Holtz ◽  
R. J. Simes ◽  
J. H. English ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Focused Ion Beam ◽  
Quantum Wires ◽  
Ion Beam ◽  
Damage Distribution ◽  
Quantum Well Structures ◽  
Ion Beam Implantation ◽  
Dose Effects

ABSTRACTThe effects of Implantation Enhanced Interdiffusion (IEI) in GaAs-GaAlAs quantum well structures are investigated. A Focused Ion Beam (FIB) source is used to implant narrow lines (500Å wide) with Ga+ ions. IEI in these structures is characterized by low temperature Cathodoluminescence. The dose effects and annealing kinetics dependence on IEI are presented. An unusual damage distribution which produces IEI deep below the surface is observed for the case of FIB implant. The possible origins of this effect and the limits of IEI for processing quantum wires and boxes are discussed.

Optical Channel Waveguides in AlGaAs Multiple Quantum Well Structures Formed by Focused Ion Beam Induced Compositional Mixing

1992 ◽  
Vol 281 ◽  
Author(s):  
Mukesh Kumar ◽  
Gregory N. De Brabander ◽  
Peter Chen ◽  
Joseph T. Boyd ◽  
Andrew J. Steckl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Propagation Loss ◽  
Optical Channel ◽  
Multiple Quantum ◽  
Mixing Depth ◽  
Quantum Well Structures ◽  
Mode Field

ABSTRACTOptical channel waveguiding in AlGaAs multiple quantum well structures formed by compositional mixing implemented by focused ion beam (FIB) implantation is demonstrated. To achieve selective mixing, Si is FIB implanted with a dose of 5×1014 cm−2 followed by RTA at 950°C for 10 s. Raman microprobe spectra are used to characterize the lateral variation of mixing. Propagation loss in a channel waveguide is measured. Measurement of the waveguide mode field distribution allows for the determination of changes in refractive index due to mixing and an approximate mixing depth.

Electric field dependence of optical absorption near the band gap of quantum-well structures

1985 ◽  
Vol 32 (2) ◽  
pp. 1043-1060 ◽  
Author(s):  
D. A. B. Miller ◽  
D. S. Chemla ◽  
T. C. Damen ◽  
A. C. Gossard ◽  
W. Wiegmann ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Band Gap ◽  
Field Dependence ◽  
Quantum Well Structures ◽  
Electric Field Dependence

Channeling defects in group-III nitrides during dry etching processes

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
J.T. Hsieh ◽  
B. Kuhn ◽  
F. Scholz ◽  
H. Schweizer
Keyword(s):  
Quantum Well ◽  
Incidence Angle ◽  
Ion Beam ◽  
Energy Shift ◽  
Group Iii Nitrides ◽  
Quantum Well Structures ◽  
Group Iii ◽  
Ion Channeling ◽  
Before And After ◽  
Gan Heterostructure

ABSTRACTThe effects of Ar+ ion beam etching (IBE) of AlGaN/GaN heterostructures and GaN/InGaN/GaN quantum well structures were investigated dependent on different ion incidence angles. The AlGaN/GaN heterostructure was measured before and after etching with respect to mobility and sheet resistance. The InGaN quantum well structure was measured with PL to determine the PL intensity and the energy shift, respectively. This experiments show that ion channeling is a significant defect generation phenomena in group- III nitrides at vertical ion incidence angle and can be minimized by tilting the sample against the ion beam.

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